Abstract
Using first-principles calculations, we show that the band gap and electron effective mass (EEM) of graphene/boron nitride heterobilayers (C/BN HBLs) can be modulated effectively by tuning the interlayer spacing and stacking arrangement. The HBLs have smaller EEM than that of graphene bilayers (GBLs), and thus higher carrier mobility. For specific stacking patterns, the nearly linear band dispersion relation of graphene monolayer can be preserved in the HBLs accompanied by a small band-gap opening. The tunable band gap and high carrier mobility of these C/BN HBLs are promising for building high-performance nanodevices.
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Dates
Type | When |
---|---|
Created | 14 years, 6 months ago (Feb. 22, 2011, 6:27 p.m.) |
Deposited | 2 years, 1 month ago (July 3, 2023, 2:52 p.m.) |
Indexed | 2 weeks, 2 days ago (Aug. 6, 2025, 8:11 a.m.) |
Issued | 14 years, 6 months ago (Feb. 21, 2011) |
Published | 14 years, 6 months ago (Feb. 21, 2011) |
Published Online | 14 years, 6 months ago (Feb. 22, 2011) |
Published Print | 14 years, 6 months ago (Feb. 21, 2011) |
Funders
1
National Natural Science Foundation of China
10.13039/501100001809
Region: Asia
gov (National government)
Labels
11
- Chinese National Science Foundation
- Natural Science Foundation of China
- National Science Foundation of China
- NNSF of China
- NSF of China
- 国家自然科学基金委员会
- National Nature Science Foundation of China
- Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
- NSFC
- NNSF
- NNSFC
Awards
1
- 10974119
@article{Fan_2011, title={Tunable electronic structures of graphene/boron nitride heterobilayers}, volume={98}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3556640}, DOI={10.1063/1.3556640}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Fan, Yingcai and Zhao, Mingwen and Wang, Zhenhai and Zhang, Xuejuan and Zhang, Hongyu}, year={2011}, month=feb }