Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

The effects of strain energy on the preferred orientation of TiN thin films were investigated. In the TiN film deposited by plasma-enhanced chemical-vapor deposition with a power of 50 W, the overall energy of the film mainly depended on the surface energy because its strain energy was relatively small. The preferred orientation of the film corresponded to the plane with the lowest surface energy, i.e., (200). However, in the TiN film deposited by rf sputtering with a power of 200 W, the overall energy of the film was largely controlled by strain energy due to its large strain energy, and its growth orientation corresponded to the plane with the lowest strain energy, i.e., (111). Furthermore, the preferred orientation of the TiN film was changed from (200) to (111) with the film thickness. It is considered that this phenomenon is due to the increase of strain energy with its thickness.

Bibliography

Oh, U. C., & Je, J. H. (1993). Effects of strain energy on the preferred orientation of TiN thin films. Journal of Applied Physics, 74(3), 1692–1696.

Authors 2
  1. U. C. Oh (first)
  2. Jung Ho Je (additional)
References 19 Referenced 368
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:46 a.m.)
Deposited 1 year, 7 months ago (Feb. 2, 2024, 6:40 a.m.)
Indexed 3 weeks, 6 days ago (Aug. 6, 2025, 8:14 a.m.)
Issued 32 years, 1 month ago (Aug. 1, 1993)
Published 32 years, 1 month ago (Aug. 1, 1993)
Published Print 32 years, 1 month ago (Aug. 1, 1993)
Funders 0

None

@article{Oh_1993, title={Effects of strain energy on the preferred orientation of TiN thin films}, volume={74}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.355297}, DOI={10.1063/1.355297}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Oh, U. C. and Je, Jung Ho}, year={1993}, month=aug, pages={1692–1696} }