DOI: 10.1063/1.354219. Direct and post-injection oxide and interface trap generation resulting from low-temperature hot-electron injection

Direct and post-injection oxide and interface trap generation resulting from low-temperature hot-electron injection

10.1063/1.354219

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We have studied direct and post-injection trap generation, induced by low-temperature (∼77 K) hot-electron injection. At these temperatures the main degradation mechanism, attributed to the release, migration, and subsequent reaction of a hydrogenic species is inoperative, not only due to the suppressed release but also to the freeze-out of the species motion. As a result, trap creation is strongly reduced as compared to room-temperature injection. Additional interface traps are created during warmup following low-temperature injection. Two post-injection generation processes have been observed: a low-temperature (120 K), bias-independent process believed to be related to the migration of neutral atomic hydrogen released during stress, and a high-temperature (250 K), negative-bias enhanced process that apparently cannot be attributed to the migration of a species, but rather resembles the negative-bias-temperature instability phenomenon.

Bibliography

Van den bosch, G., Groeseneken, G., & Maes, H. E. (1993). Direct and post-injection oxide and interface trap generation resulting from low-temperature hot-electron injection. Journal of Applied Physics, 74(9), 5582â5586.

Authors 3

Geert Van den bosch (first)
Guido Groeseneken (additional)
Herman E. Maes (additional)

References 19 Referenced 22

{'key': '2024020211312119100_r1'}
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{'key': '2024020211312119100_r3', 'first-page': '310', 'year': '1991', 'journal-title': 'Proc. IRPS'} / Proc. IRPS (1991)
10.1063/1.347040 / J. Appl. Phys. (1990)
10.1063/1.105757 / Appl. Phys. Lett. (1991)
10.1063/1.106551 / Appl. Phys. Lett. (1992)
10.1063/1.1662633 / J. Appl. Phys. (1973)
{'key': '2024020211312119100_r8', 'first-page': '42', 'volume': 'ED-31', 'year': '1984', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1984)
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10.1109/23.25438 / IEEE Trans. Nucl. Sci. (1988)
10.1109/23.25445 / IEEE Trans. Nucl. Sci. (1988)
10.1063/1.335931 / J. Appl. Phys. (1985)
10.1063/1.323909 / J. Appl. Phys. (1977)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:35 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 7:06 a.m.)
Indexed	1 year, 6 months ago (Feb. 3, 2024, 10:59 a.m.)
Issued	31 years, 9 months ago (Nov. 1, 1993)
Published	31 years, 9 months ago (Nov. 1, 1993)
Published Print	31 years, 9 months ago (Nov. 1, 1993)

Funders 0

None

BibTeX

@article{Van_den_bosch_1993, title={Direct and post-injection oxide and interface trap generation resulting from low-temperature hot-electron injection}, volume={74}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.354219}, DOI={10.1063/1.354219}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Van den bosch, Geert and Groeseneken, Guido and Maes, Herman E.}, year={1993}, month=nov, pages={5582–5586} }

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