DOI: 10.1063/1.354103. Characterization and depth profiling of <i>E</i>′ defects in buried SiO2

Characterization and depth profiling of E′ defects in buried SiO2

10.1063/1.354103

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Oxygen-vacancy defects (E′) generated at the surface of buried SiO2 (BOX) layers formed by O+ implantation during the separation by implantation of oxygen process have been studied by electron spin resonance at 4.3 K. The E′ generation tool used was exposure to a dc Ar glow discharge that produces E′ defects predominantly in a surface layer of ≊100-Å thick, reaching local volume densities at the surface up to 8×1019 cm−3. This glow discharge exposure, alternated with step-by-step etch back, allowed mapping of the defect generation sensitivity depth profile for the entire buried layer, revealing a fairly uniform sensitivity with a strong decline towards the BOX/substrate interface. Besides the usual E′γ signal, the E′δ center—a delocalized variant of the E′ center—has been newly observed in the BOX. Reoxidation (950 °C; 1.1 atm O2) of the BOX was observed to reduce the E′ sensitivity close to that of regular dry thermal oxide (≥29 times lower), while the E′δ signal could no longer be generated—again similar to conventional thermal oxide. These data suggest an adapted model for the E′δ defect, based on the existence of small Si clusters (≳5 atoms) in the BOX serving as defect precursors. Generally, the results imply that the buried oxide contains excess Si, exceedingly so near the BOX/substrate interface.

Bibliography

Vanheusden, K., & Stesmans, A. (1993). Characterization and depth profiling of Eâ² defects in buried SiO2. Journal of Applied Physics, 74(1), 275â283.

Authors 2

K. Vanheusden (first)
A. Stesmans (additional)

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:15 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 6:24 a.m.)
Indexed	2 months, 1 week ago (June 24, 2025, 7:28 a.m.)
Issued	32 years, 2 months ago (July 1, 1993)
Published	32 years, 2 months ago (July 1, 1993)
Published Print	32 years, 2 months ago (July 1, 1993)

Funders 0

None

BibTeX

@article{Vanheusden_1993, title={Characterization and depth profiling of E′ defects in buried SiO2}, volume={74}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.354103}, DOI={10.1063/1.354103}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Vanheusden, K. and Stesmans, A.}, year={1993}, month=jul, pages={275–283} }

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