Abstract
Electromigration is an important concern in very large scale integrated circuits. In narrow, confined metal interconnects used at the chip level, the electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Solutions for the differential equation governing the evolution of back stresses are presented for several representative cases, and the solutions are discussed in the light of experimental as well as theoretical developments from the literature.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:46 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 4, 2024, 11:41 a.m.) |
Indexed | 1 day, 21 hours ago (Aug. 28, 2025, 8:27 a.m.) |
Issued | 32 years, 4 months ago (April 15, 1993) |
Published | 32 years, 4 months ago (April 15, 1993) |
Published Print | 32 years, 4 months ago (April 15, 1993) |
@article{Korhonen_1993, title={Stress evolution due to electromigration in confined metal lines}, volume={73}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.354073}, DOI={10.1063/1.354073}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Korhonen, M. A. and Bo/rgesen, P. and Tu, K. N. and Li, Che-Yu}, year={1993}, month=apr, pages={3790–3799} }