DOI: 10.1063/1.353901. Generation of Si–SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures

Generation of Si–SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures

10.1063/1.353901

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The temperature dependence (in the range 100–450 K) of the generation of fast interface states at the Si–SiO2 interface by high electric field stress in metal–oxide-semiconductor capacitors when electrons are injected by Fowler–Nordheim tunneling from the Si substrate (n type Si, with a positively biased gate) and from the gate (p type Si, with a negatively biased gate) was analyzed. In both cases, two different temperature regimes can be distinguished, which correspond to two mechanisms responsible for the creation of fast interface states. At stress temperature Ts larger than 180 K, a temperature-activated regime is shown to be consistent with a diffusion of hydrogen-related species, while for Ts&lt;180 K, a nonactivated regime seems consistent with the trapped-hole model. The diffusion coefficients of these hydrogen-related species in the intermediate Ts range 180 K&lt;Ts&lt;300 K were determined. It is DH≊10−14–10−11 cm2/s, in good agreement with the extrapolated values from the known data for the hydrogen diffusion in SiO2 determined at higher temperatures.

Bibliography

Vuillaume, D., Mir, A., Bouchakour, R., Jourdain, M., El-Hdiy, A., & Salace, G. (1993). Generation of SiâSiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures. Journal of Applied Physics, 73(1), 277â288.

Authors 6

Dominique Vuillaume (first)
Abdellah Mir (additional)
Rachid Bouchakour (additional)
Marc Jourdain (additional)
Abdelillah El-Hdiy (additional)
Guy Salace (additional)

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:45 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 11:18 a.m.)
Indexed	1 year, 1 month ago (July 5, 2024, 12:39 p.m.)
Issued	32 years, 7 months ago (Jan. 1, 1993)
Published	32 years, 7 months ago (Jan. 1, 1993)
Published Print	32 years, 7 months ago (Jan. 1, 1993)

Funders 0

None

BibTeX

@article{Vuillaume_1993, title={Generation of Si–SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures}, volume={73}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.353901}, DOI={10.1063/1.353901}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Vuillaume, Dominique and Mir, Abdellah and Bouchakour, Rachid and Jourdain, Marc and El-Hdiy, Abdelillah and Salace, Guy}, year={1993}, month=jan, pages={277–288} }

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