DOI: 10.1063/1.353882. Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties

Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties

10.1063/1.353882

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Reactive-ion molecular-beam epitaxy has been used to grow epitaxial hexagonal-structure α-GaN on Al2O3(0001) and Al2O3(011̄2) substrates and metastable zinc-blende-structure β-GaN on MgO(001) under the following conditions: growth temperature Ts=450–800 °C; incident N+2/Ga flux ratio JN+2/JGa=1–5; and N+2 kinetic energy EN+2=35–90 eV. The surface structure of the α-GaN films was (1×1), with an ≊3% contraction in the in-plane lattice constant for films grown on Al2O3(0001), while the β-GaN films exhibited a 90°-rotated two-domain (4×1) reconstruction. Using a combination of in situ reflection high-energy electron diffraction, double-crystal x-ray diffraction, and cross-sectional transmission electron microscopy, the film/substrate epitaxial relationships were determined to be: (0001)GaN∥ (0001)Al2O3 with [21̄1̄0]GaN∥[11̄00]Al2O3 and [11̄00]GaN∥[12̄10]Al2O3, (21̄1̄0)GaN∥(011̄2)Al2O3 with [0001]GaN∥[01̄11]Al2O3 and [01̄10]GaN∥[21̄1̄0]Al2O3, and (001)GaN∥(001)MgO with [001]GaN∥[001]MgO. Films with the lowest extended defect number densities (nd≂1010 cm−2 threading dislocations with Burgers vector a0/3&lt;112̄0≳) and the smallest x-ray-diffraction ω rocking curve widths (5 min) were obtained using Al2O3(0001) substrates, Ts≥650 °C, JN+2/JGa≥3.5, and EN+2=35 eV. Higher N+2 acceleration energies during deposition resulted in increased residual defect densities. In addition, EN+2 and JN+2/JGa were found to have a strong effect on film growth kinetics through a competition between collisionally induced dissociative chemisorption of N2 and stimulated desorption of Ga as described by a simple kinetic growth model. The room-temperature resistivity of as-deposited GaN films grown at Ts=600–700 °C with EN+2=35 eV increased by seven orders of magnitude, from 10−1 to 106 Ω cm, with an increase in JN+2/JGa from 1.7 to 5.0. Hall measurements on the more conductive samples yielded typical electron carrier concentrations of 2×1018 cm−3 with mobilities of 30–40 cm2 V−1 s−1. The room-temperature optical band gaps of α-GaN and β-GaN were 3.41 and 3.21 eV, respectively.

Bibliography

Powell, R. C., Lee, N.-E., Kim, Y.-W., & Greene, J. E. (1993). Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties. Journal of Applied Physics, 73(1), 189â204.

Authors 4

R. C. Powell (first)
N.-E. Lee (additional)
Y.-W. Kim (additional)
J. E. Greene (additional)

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:45 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 11:16 a.m.)
Indexed	3 weeks, 5 days ago (Aug. 6, 2025, 8:04 a.m.)
Issued	32 years, 8 months ago (Jan. 1, 1993)
Published	32 years, 8 months ago (Jan. 1, 1993)
Published Print	32 years, 8 months ago (Jan. 1, 1993)

Funders 0

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BibTeX

@article{Powell_1993, title={Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties}, volume={73}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.353882}, DOI={10.1063/1.353882}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Powell, R. C. and Lee, N.-E. and Kim, Y.-W. and Greene, J. E.}, year={1993}, month=jan, pages={189–204} }

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  "abstract": "<jats:p>Reactive-ion molecular-beam epitaxy has been used to grow epitaxial hexagonal-structure \u03b1-GaN on Al2O3(0001) and Al2O3(011\u03042) substrates and metastable zinc-blende-structure \u03b2-GaN on MgO(001) under the following conditions: growth temperature Ts=450\u2013800\u2009\u00b0C; incident N+2/Ga flux ratio JN+2/JGa=1\u20135; and N+2 kinetic energy EN+2=35\u201390 eV. The surface structure of the \u03b1-GaN films was (1\u00d71), with an \u224a3% contraction in the in-plane lattice constant for films grown on Al2O3(0001), while the \u03b2-GaN films exhibited a 90\u00b0-rotated two-domain (4\u00d71) reconstruction. Using a combination of in\u2008situ reflection high-energy electron diffraction, double-crystal x-ray diffraction, and cross-sectional transmission electron microscopy, the film/substrate epitaxial relationships were determined to be: (0001)GaN\u2225 (0001)Al2O3 with [21\u03041\u03040]GaN\u2225[11\u030400]Al2O3 and [11\u030400]GaN\u2225[12\u030410]Al2O3, (21\u03041\u03040)GaN\u2225(011\u03042)Al2O3 with [0001]GaN\u2225[01\u030411]Al2O3 and [01\u030410]GaN\u2225[21\u03041\u03040]Al2O3, and (001)GaN\u2225(001)MgO with [001]GaN\u2225[001]MgO.</jats:p>\n               <jats:p>Films with the lowest extended defect number densities (nd\u22421010 cm\u22122 threading dislocations with Burgers vector a0/3&amp;lt;112\u03040\u2273) and the smallest x-ray-diffraction \u03c9 rocking curve widths (5 min) were obtained using Al2O3(0001) substrates, Ts\u2265650\u2009\u00b0C, JN+2/JGa\u22653.5, and EN+2=35 eV. Higher N+2 acceleration energies during deposition resulted in increased residual defect densities. In addition, EN+2 and JN+2/JGa were found to have a strong effect on film growth kinetics through a competition between collisionally induced dissociative chemisorption of N2 and stimulated desorption of Ga as described by a simple kinetic growth model. The room-temperature resistivity of as-deposited GaN films grown at Ts=600\u2013700\u2009\u00b0C with EN+2=35 eV increased by seven orders of magnitude, from 10\u22121 to 106 \u03a9\u2009cm, with an increase in JN+2/JGa from 1.7 to 5.0. Hall measurements on the more conductive samples yielded typical electron carrier concentrations of 2\u00d71018 cm\u22123 with mobilities of 30\u201340 cm2\u2009V\u22121\u2009s\u22121. The room-temperature optical band gaps of \u03b1-GaN and \u03b2-GaN were 3.41 and 3.21 eV, respectively.</jats:p>",
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