DOI: 10.1063/1.353845. Anisotropic etching versus interaction of atomic steps: Scanning tunneling microscopy observations on HF/NH4F-treated Si(111)

Anisotropic etching versus interaction of atomic steps: Scanning tunneling microscopy observations on HF/NH4F-treated Si(111)

10.1063/1.353845

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

After ex situ etching with various solutions of hydrofluoric acid (HF) and ammonium fluoride (NH4F) Si(111) samples are transferred into ultrahigh vacuum with an ultrafast load-lock and characterized by scanning tunneling microscopy (STM): Concentrated HF selectively removes any surface oxide and, thus chemically prepares the initially burried, isotropically rough Si/SiO2 interface while highly buffered HF (i.e., NH4F) attacks bulk silicon anisotropically. After a rapid homogenization of the chemical surface termination (HF: various hydrides, fluorine, ...) towards a perfect, unreconstructed monohydride phase, Si(111)-(1×1):H, NH4F etching leads to a time-dependent transformation of isotropic roughness into a pattern of triangular etch defects with monohydride steps perpendicular to &lt;2̄11≳ due to a preferential removal of lower-coordinated atomic defect sites. A predominant atomic step structure due to sample miscut (vicinal surfaces with azimuth ≠&lt;2̄11≳) can oppose the anisotropic NH4F etching: At low step density (small polar angle of miscut) a meandering of atomic steps with straight monohydride portions is observed while at high step density strong step-step interaction counterbalances anisotropic removal and forces an etching by a homogeneous flow of (nonmonohydride) steps along the macroscopic misorientation. Local findings obtained with STM are compared to macroscopically averaged results from a simultaneous quantitative analysis of low-energy electron diffraction profiles.

Bibliography

Pietsch, G. J., KÃ¶hler, U., & Henzler, M. (1993). Anisotropic etching versus interaction of atomic steps: Scanning tunneling microscopy observations on HF/NH4F-treated Si(111). Journal of Applied Physics, 73(10), 4797â4807.

Authors 3

G. J. Pietsch (first)
U. Köhler (additional)
M. Henzler (additional)

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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:15 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 11:51 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 7:39 p.m.)
Issued	32 years, 3 months ago (May 15, 1993)
Published	32 years, 3 months ago (May 15, 1993)
Published Print	32 years, 3 months ago (May 15, 1993)

Funders 0

None

BibTeX

@article{Pietsch_1993, title={Anisotropic etching versus interaction of atomic steps: Scanning tunneling microscopy observations on HF/NH4F-treated Si(111)}, volume={73}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.353845}, DOI={10.1063/1.353845}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Pietsch, G. J. and Köhler, U. and Henzler, M.}, year={1993}, month=may, pages={4797–4807} }

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