DOI: 10.1063/1.353438. Boron diffusion through thin gate oxides: Influence of nitridation and effect on the Si/SiO2 interface electrical characteristics

Boron diffusion through thin gate oxides: Influence of nitridation and effect on the Si/SiO2 interface electrical characteristics

10.1063/1.353438

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The diffusion of boron in N2 ambient is studied by using p+ polysilicon metal-oxide-silicon structures annealed during times long enough to allow boron diffusion through the gate oxide, up to the underlying substrate. Assuming equilibrium segregation at the interfaces, the boron diffusivity in the oxide is calculated by numerically fitting the resulting profile in the substrate. It is found that B diffuses in SiO2 with an activation energy of about 3 eV. We also quantify the influence of the nitridation of the oxide, and confirm its efficiency as a diffusion barrier. However, this study reveals a strong inconsistency between the extracted diffusivity values of B in SiO2 and the amount of B atoms being able to reach the Si/SiO2 interface to account for the observed interface state density.

Bibliography

Mathiot, D., Straboni, A., Andre, E., & Debenest, P. (1993). Boron diffusion through thin gate oxides: Influence of nitridation and effect on the Si/SiO2 interface electrical characteristics. Journal of Applied Physics, 73(12), 8215â8220.

Authors 4

D. Mathiot (first)
A. Straboni (additional)
E. Andre (additional)
P. Debenest (additional)

References 20 Referenced 58

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10.1149/1.2403391 / J. Electrochem. Soc. (1973)
10.1016/0038-1101(75)90117-3 / Solid-State Electron. (1975)
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10.1109/55.55269 / IEEE Electron Device Lett. (1990)
10.1016/0167-9317(91)90268-I / Microelectron. Eng. (1991)
{'key': '2024020210535616600_r16'}
10.1149/1.2131361 / J. Electrochem. Soc. (1978)
10.1063/1.333318 / J. Appl. Phys. (1984)
10.1109/16.57135 / IEEE Trans. Electron Devices (1990)
{'key': '2024020210535616600_r20'}

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 6:21 a.m.)
Indexed	1 month ago (July 25, 2025, 6:21 a.m.)
Issued	32 years, 2 months ago (June 15, 1993)
Published	32 years, 2 months ago (June 15, 1993)
Published Print	32 years, 2 months ago (June 15, 1993)

Funders 0

None

BibTeX

@article{Mathiot_1993, title={Boron diffusion through thin gate oxides: Influence of nitridation and effect on the Si/SiO2 interface electrical characteristics}, volume={73}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.353438}, DOI={10.1063/1.353438}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Mathiot, D. and Straboni, A. and Andre, E. and Debenest, P.}, year={1993}, month=jun, pages={8215–8220} }

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