Abstract
Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From the experimental viewpoint, the challenge is to fine-tune the magnitude of the strain. We illustrate here how, by using a suitable combination of composition and substrate, the magnitude of the epitaxial strain can be controlled in a continuous manner. The phase diagram of PbxSr1−xTiO3 films grown epitaxially on (110)-DyScO3 is calculated using a Devonshire–Landau approach. A boundary between in-plane and out-of-plane oriented ferroelectric phases is predicted to take place at x≈0.8. A series of PbxSr1−xTiO3 epitaxial films grown by molecular beam epitaxy shows good agreement with the proposed phase diagram.
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Dates
Type | When |
---|---|
Created | 14 years, 7 months ago (Dec. 29, 2010, 6:21 p.m.) |
Deposited | 2 years, 1 month ago (July 2, 2023, 8:18 p.m.) |
Indexed | 3 weeks ago (July 30, 2025, 6:56 a.m.) |
Issued | 14 years, 7 months ago (Dec. 27, 2010) |
Published | 14 years, 7 months ago (Dec. 27, 2010) |
Published Online | 14 years, 7 months ago (Dec. 29, 2010) |
Published Print | 14 years, 7 months ago (Dec. 27, 2010) |
@article{Rispens_2010, title={Fine tuning epitaxial strain in ferroelectrics: PbxSr1−xTiO3 on DyScO3}, volume={97}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3532103}, DOI={10.1063/1.3532103}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rispens, G. and Heuver, J. A. and Noheda, B.}, year={2010}, month=dec }