Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Epitaxial strain can be efficiently used to modify the properties of ferroelectric thin films. From the experimental viewpoint, the challenge is to fine-tune the magnitude of the strain. We illustrate here how, by using a suitable combination of composition and substrate, the magnitude of the epitaxial strain can be controlled in a continuous manner. The phase diagram of PbxSr1−xTiO3 films grown epitaxially on (110)-DyScO3 is calculated using a Devonshire–Landau approach. A boundary between in-plane and out-of-plane oriented ferroelectric phases is predicted to take place at x≈0.8. A series of PbxSr1−xTiO3 epitaxial films grown by molecular beam epitaxy shows good agreement with the proposed phase diagram.

Bibliography

Rispens, G., Heuver, J. A., & Noheda, B. (2010). Fine tuning epitaxial strain in ferroelectrics: PbxSr1−xTiO3 on DyScO3. Applied Physics Letters, 97(26).

Authors 3
  1. G. Rispens (first)
  2. J. A. Heuver (additional)
  3. B. Noheda (additional)
References 38 Referenced 27
  1. 10.1146/annurev.matsci.37.061206.113016 / Annu. Rev. Mater. Res. (2007)
  2. 10.1038/28810 / Nature (London) (1998)
  3. 10.1038/nmat1805 / Nature Mater. (2007)
  4. 10.1038/nature02773 / Nature (London) (2004)
  5. 10.1103/PhysRevLett.102.217603 / Phys. Rev. Lett. (2009)
  6. 10.1063/1.2198088 / Appl. Phys. Lett. (2006)
  7. 10.1126/science.1169678 / Science (2009)
  8. 10.1126/science.1177046 / Science (2009)
  9. 10.1038/nature09331 / Nature (London) (2010)
  10. 10.1103/PhysRevLett.104.037601 / Phys. Rev. Lett. (2010)
  11. 10.1103/PhysRevB.72.144101 / Phys. Rev. B (2005)
  12. 10.1103/PhysRevLett.95.257601 / Phys. Rev. Lett. (2005)
  13. 10.1103/PhysRevLett.97.267602 / Phys. Rev. Lett. (2006)
  14. 10.1103/PhysRevB.64.214103 / Phys. Rev. B (2001)
  15. 10.1103/PhysRevLett.84.3722 / Phys. Rev. Lett. (2000)
  16. 10.1103/PhysRevLett.80.1988 / Phys. Rev. Lett. (1998)
  17. 10.1557/JMR.2005.0126 / J. Mater. Res. (2005)
  18. 10.1063/1.357097 / J. Appl. Phys. (1994)
  19. 10.1063/1.2783274 / Appl. Phys. Lett. (2007)
  20. 10.1103/PhysRevLett.105.037208 / Phys. Rev. Lett. (2010)
  21. 10.1063/1.3479479 / Appl. Phys. Lett. (2010)
  22. 10.1143/JPSJ.10.108 / J. Phys. Soc. Jpn. (1955)
  23. 10.1016/S1466-6049(01)00187-8 / Int. J. Inorg. Mater. (2001)
  24. 10.1016/S0925-8388(03)00345-1 / J. Alloys Compd. (2003)
  25. 10.1103/PhysRevLett.96.127602 / Phys. Rev. Lett. (2006)
  26. 10.1103/PhysRevB.79.224117 / Phys. Rev. B (2009)
  27. 10.1063/1.1473675 / J. Appl. Phys. (2002)
  28. 10.1002/adma.200700965 / Adv. Mater. (2007)
  29. 10.1103/PhysRevB.79.144118 / Phys. Rev. B (2009)
  30. 10.1063/1.339293 / J. Appl. Phys. (1987)
  31. {'key': '2023070300180240800_c31'}
  32. {'volume-title': 'Numerical Data and Functional Relationships in Science and Technology', 'year': '1981', 'author': 'Hellwege', 'key': '2023070300180240800_c32'} / Numerical Data and Functional Relationships in Science and Technology by Hellwege (1981)
  33. 10.1063/1.1855389 / Appl. Phys. Lett. (2005)
  34. 10.1016/S0022-0248(96)01144-X / J. Cryst. Growth (1997)
  35. 10.1016/S0040-6090(98)00507-0 / Thin Solid Films (1998)
  36. 10.1080/10584580701746731 / Integr. Ferroelectr. (2007)
  37. 10.1063/1.120377 / Appl. Phys. Lett. (1997)
  38. {'key': '2023070300180240800_c38', 'article-title': 'Domain structure and properties of in-plane polarized PbxSr1−xTiO3 on DyScO3'} / Domain structure and properties of in-plane polarized PbxSr1−xTiO3 on DyScO3
Dates
Type When
Created 14 years, 7 months ago (Dec. 29, 2010, 6:21 p.m.)
Deposited 2 years, 1 month ago (July 2, 2023, 8:18 p.m.)
Indexed 3 weeks ago (July 30, 2025, 6:56 a.m.)
Issued 14 years, 7 months ago (Dec. 27, 2010)
Published 14 years, 7 months ago (Dec. 27, 2010)
Published Online 14 years, 7 months ago (Dec. 29, 2010)
Published Print 14 years, 7 months ago (Dec. 27, 2010)
Funders 0

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@article{Rispens_2010, title={Fine tuning epitaxial strain in ferroelectrics: PbxSr1−xTiO3 on DyScO3}, volume={97}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3532103}, DOI={10.1063/1.3532103}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rispens, G. and Heuver, J. A. and Noheda, B.}, year={2010}, month=dec }