DOI: 10.1063/1.352977. Simulations of hydrogen deposition processes in <i>a</i>-Si:H film growth

Simulations of hydrogen deposition processes in a-Si:H film growth

10.1063/1.352977

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Molecular dynamics simulations of the deposition of atomic H on both c-Si and a-Si:H substrates are performed to understand the physical processes occurring in the presence of an atomic H flux during growth. The absorption probability, and dynamical behavior of the H are studied as a function of the incident H energy. Both hydrogen absorption and backscattering events are observed. The hydrogen reflection probability has a maximum around 50 eV and decreases at higher incident kinetic energies. In the hydrogen backscattering events a substantial subsurface penetration and energy transfer through collisions are observed. Hydrogen absorption events have been closely analyzed and a surface hydrogen release event was observed during an absorption event.

Bibliography

Biswas, R. (1993). Simulations of hydrogen deposition processes in a-Si:H film growth. Journal of Applied Physics, 73(7), 3295â3298.

Authors 1

R. Biswas (first)

References 10 Referenced 8

10.1063/1.105282 / Appl. Phys. Lett. (1991)
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{'key': '2024020416395216400_r3'}
10.1557/PROC-219-619 / Mater. Res. Soc. Proc. (1991)
10.1103/PhysRevB.44.3403 / Phys. Rev. B (1991)
10.1103/PhysRevB.45.3332 / Phys. Rev. B (1992)
10.1103/PhysRevB.43.1859 / Phys. Rev. B (1991)
10.1103/PhysRevB.26.6756 / Phys. Rev. B (1982)
10.1557/PROC-219-781 / Mater. Res. Soc. Proc. (1991)
{'key': '2024020416395216400_r10'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:15 a.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 11:40 a.m.)
Indexed	1 year, 7 months ago (Feb. 4, 2024, 12:10 p.m.)
Issued	32 years, 5 months ago (April 1, 1993)
Published	32 years, 5 months ago (April 1, 1993)
Published Print	32 years, 5 months ago (April 1, 1993)

Funders 0

None

BibTeX

@article{Biswas_1993, title={Simulations of hydrogen deposition processes in a-Si:H film growth}, volume={73}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.352977}, DOI={10.1063/1.352977}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Biswas, R.}, year={1993}, month=apr, pages={3295–3298} }

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