DOI: 10.1063/1.352902. Passivation of carbon-doped GaAs layers by hydrogen introduced by annealing and growth ambients

Passivation of carbon-doped GaAs layers by hydrogen introduced by annealing and growth ambients

10.1063/1.352902

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Carbon acceptors in GaAs epitaxial layers grown from metalorganic sources are often partially passivated by hydrogen following growth. Here we examine heavily C-doped GaAs epilayers grown by metalorganic molecular beam epitaxy and metalorganic vapor phase epitaxy by infrared absorption, secondary ion mass spectrometry, and Hall measurements. The concentration of passivated C has been determined by calibrating the intensity of infrared absorption due to C-H complexes. We have investigated the sources of H in the layers and have found that H2 in the growth and annealing ambients is especially effective in passivating C. A brief anneal in an inert ambient at temperatures above 550 °C is sufficient to activate C acceptors that are passivated by H.

Bibliography

Kozuch, D. M., Stavola, M., Pearton, S. J., Abernathy, C. R., & Hobson, W. S. (1993). Passivation of carbon-doped GaAs layers by hydrogen introduced by annealing and growth ambients. Journal of Applied Physics, 73(8), 3716â3724.

Authors 5

D. M. Kozuch (first)
Michael Stavola (additional)
S. J. Pearton (additional)
C. R. Abernathy (additional)
W. S. Hobson (additional)

References 56 Referenced 63

10.1016/0022-0248(90)90389-3 / J. Cryst. Growth (1990)
10.1063/1.97846 / Appl. Phys. Lett. (1987)
10.1063/1.100008 / Appl. Phys. Lett. (1988)
10.1063/1.341356 / J. Appl. Phys. (1988)
10.1063/1.101822 / Appl. Phys. Lett. (1989)
10.1063/1.102206 / Appl. Phys. Lett. (1989)
10.1143/JJAP.24.1189 / Jpn. J. Appl. Phys. (1985)
10.1016/0022-0248(86)90118-1 / J. Cryst. Growth (1986)
10.1016/0022-0248(89)90196-6 / J. Cryst. Growth (1989)
10.1063/1.102608 / Appl. Phys. Lett. (1990)
10.1063/1.103889 / Appl. Phys. Lett. (1990)
10.1063/1.104960 / Appl. Phys. Lett. (1991)
{'key': '2024020416404716300_r13'}
10.1063/1.108212 / Appl. Phys. Lett. (1992)
10.1063/1.107926 / Appl. Phys. Lett. (1992)
10.1063/1.101872 / Appl. Phys. Lett. (1989)
10.1063/1.103817 / Appl. Phys. Lett. (1990)
{'key': '2024020416404716300_r18'}
{'key': '2024020416404716300_r19'}
10.1016/0022-0248(92)90411-B / J. Cryst. Growth (1992)
10.1063/1.106908 / Appl. Phys. Lett. (1992)
10.1103/PhysRevB.45.9120 / Phys. Rev. B (1992)
10.1063/1.106712 / Appl. Phys. Lett. (1992)
10.1063/1.106814 / Appl. Phys. Lett. (1992)
10.1063/1.105835 / Appl. Phys. Lett. (1991)
{'key': '2024020416404716300_r26', 'first-page': '847', 'volume': '60', 'year': '1991', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1991)
10.1063/1.107622 / Appl. Phys. Lett. (1992)
{'key': '2024020416404716300_r28', 'first-page': '435', 'volume': '59', 'year': '1991', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1991)
10.1063/1.106167 / Appl. Phys. Lett. (1991)
10.1063/1.98358 / Appl. Phys. Lett. (1987)
10.1103/PhysRevLett.65.1800 / Phys. Rev. Lett. (1990)
{'key': '2024020416404716300_r32'}
10.1088/0268-1242/6/5/003 / Semicond. Sci. Technol. (1991)
{'key': '2024020416404716300_r34'}
{'key': '2024020416404716300_r35', 'first-page': '3673', 'volume': '44', 'year': '1991', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1991)
10.1016/0022-0248(91)90578-S / J. Cryst. Growth (1991)
10.1063/1.105184 / Appl. Phys. Lett. (1991)
10.1063/1.347110 / J. Appl. Phys. (1990)
10.1116/1.573115 / J. Vac. Sci. Technol. A (1985)
10.1063/1.104450 / Appl. Phys. Lett. (1991)
{'key': '2024020416404716300_r41'}
{'key': '2024020416404716300_r42'}
10.1103/PhysRevB.39.13549 / Phys. Rev. B (1989)
10.1063/1.105635 / Appl. Phys. Lett. (1991)
{'key': '2024020416404716300_r45'}
10.1016/0921-5107(92)90160-B / Mater. Sci. Engineer. B (1992)
{'key': '2024020416404716300_r47'}
{'key': '2024020416404716300_r48'}
10.1007/BF00615937 / Appl. Phys. A (1988)
10.1063/1.335637 / J. Appl. Phys. (1985)
10.1146/annurev.ms.18.080188.001251 / Ann. Rev. Mater. Sci. (1988)
10.1063/1.341664 / J. Appl. Phys. (1988)
10.1049/el:19880633 / Electron. Lett. (1988)
10.1063/1.99824 / Appl. Phys. Lett. (1988)
10.1063/1.101091 / Appl. Phys. Lett. (1989)
10.1103/PhysRevB.26.7105 / Phys. Rev. B (1982)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:46 a.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 11:41 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 7:40 p.m.)
Issued	32 years, 4 months ago (April 15, 1993)
Published	32 years, 4 months ago (April 15, 1993)
Published Print	32 years, 4 months ago (April 15, 1993)

Funders 0

None

BibTeX

@article{Kozuch_1993, title={Passivation of carbon-doped GaAs layers by hydrogen introduced by annealing and growth ambients}, volume={73}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.352902}, DOI={10.1063/1.352902}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kozuch, D. M. and Stavola, Michael and Pearton, S. J. and Abernathy, C. R. and Hobson, W. S.}, year={1993}, month=apr, pages={3716–3724} }

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      "first-page": "292",
      "DOI": "10.1016/0022-0248(86)90118-1",
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    },
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      "first-page": "167",
      "DOI": "10.1016/0022-0248(89)90196-6",
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      "first-page": "1040",
      "DOI": "10.1063/1.102608",
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      "first-page": "2348",
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      "first-page": "164",
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      "DOI": "10.1063/1.107926",
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      "key": "2024020416404716300_r18"
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      "key": "2024020416404716300_r19"
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    {
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      "DOI": "10.1063/1.106908",
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      "first-page": "9120",
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      "key": "2024020416404716300_r23",
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      "first-page": "3259",
      "DOI": "10.1063/1.106712",
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    {
      "key": "2024020416404716300_r24",
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      "first-page": "2903",
      "DOI": "10.1063/1.106814",
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      "first-page": "2865",
      "DOI": "10.1063/1.105835",
      "volume": "59",
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      "journal-title": "Appl. Phys. Lett."
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    {
      "key": "2024020416404716300_r26",
      "first-page": "847",
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      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
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      "key": "2024020416404716300_r27",
      "doi-asserted-by": "crossref",
      "first-page": "87",
      "DOI": "10.1063/1.107622",
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      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020416404716300_r28",
      "first-page": "435",
      "volume": "59",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020416404716300_r29",
      "doi-asserted-by": "crossref",
      "first-page": "2001",
      "DOI": "10.1063/1.106167",
      "volume": "59",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020416404716300_r30",
      "doi-asserted-by": "crossref",
      "first-page": "596",
      "DOI": "10.1063/1.98358",
      "volume": "51",
      "year": "1987",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020416404716300_r31",
      "doi-asserted-by": "crossref",
      "first-page": "1800",
      "DOI": "10.1103/PhysRevLett.65.1800",
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      "year": "1990",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020416404716300_r32"
    },
    {
      "key": "2024020416404716300_r33",
      "doi-asserted-by": "crossref",
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      "volume": "6",
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    {
      "key": "2024020416404716300_r34"
    },
    {
      "key": "2024020416404716300_r35",
      "first-page": "3673",
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      "year": "1991",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020416404716300_r36",
      "doi-asserted-by": "crossref",
      "first-page": "903",
      "DOI": "10.1016/0022-0248(91)90578-S",
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    },
    {
      "key": "2024020416404716300_r37",
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      "first-page": "1416",
      "DOI": "10.1063/1.105184",
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      "journal-title": "Appl. Phys. Lett."
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    {
      "key": "2024020416404716300_r38",
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      "first-page": "169",
      "DOI": "10.1063/1.347110",
      "volume": "68",
      "year": "1990",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020416404716300_r39",
      "doi-asserted-by": "crossref",
      "first-page": "1027",
      "DOI": "10.1116/1.573115",
      "volume": "3",
      "year": "1985",
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    },
    {
      "key": "2024020416404716300_r40",
      "doi-asserted-by": "crossref",
      "first-page": "77",
      "DOI": "10.1063/1.104450",
      "volume": "58",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020416404716300_r41"
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    {
      "key": "2024020416404716300_r42"
    },
    {
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      "first-page": "13549",
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    {
      "key": "2024020416404716300_r44",
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      "first-page": "3571",
      "DOI": "10.1063/1.105635",
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    {
      "key": "2024020416404716300_r45"
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      "key": "2024020416404716300_r46",
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    {
      "key": "2024020416404716300_r47"
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      "key": "2024020416404716300_r48"
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      "first-page": "309",
      "DOI": "10.1007/BF00615937",
      "volume": "47",
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      "journal-title": "Appl. Phys. A"
    },
    {
      "key": "2024020416404716300_r50",
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      "first-page": "3731",
      "DOI": "10.1063/1.335637",
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      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020416404716300_r51",
      "doi-asserted-by": "crossref",
      "first-page": "219",
      "DOI": "10.1146/annurev.ms.18.080188.001251",
      "volume": "18",
      "year": "1988",
      "journal-title": "Ann. Rev. Mater. Sci."
    },
    {
      "key": "2024020416404716300_r52",
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      "first-page": "2334",
      "DOI": "10.1063/1.341664",
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      "first-page": "929",
      "DOI": "10.1049/el:19880633",
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      "journal-title": "Electron. Lett."
    },
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      "first-page": "758",
      "DOI": "10.1063/1.99824",
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      "journal-title": "Appl. Phys. Lett."
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      "first-page": "2411",
      "DOI": "10.1063/1.101091",
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      "journal-title": "Appl. Phys. Lett."
    },
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      "key": "2024020416404716300_r56",
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      "first-page": "7105",
      "DOI": "10.1103/PhysRevB.26.7105",
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