Abstract
Negatively charged nitrogen-vacancy (NV−) centers in diamond produced by ion implantation often show properties different from NVs created during the crystal growth. We observe that NVs created from nitrogen ion implantation at 30–300 keV show much shorter electron spin coherence time T2 as compared to the “natural” NVs and about 20% of them show switching from NV− to NV0. We show that annealing the diamond at T=1200 °C substantially increases T2 and at the same time the fraction of NVs converting from NV− to NV0 is greatly reduced.
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Dates
Type | When |
---|---|
Created | 14 years, 8 months ago (Dec. 17, 2010, 6:37 p.m.) |
Deposited | 2 years, 2 months ago (June 24, 2023, 11:10 p.m.) |
Indexed | 1 week, 4 days ago (Aug. 23, 2025, 1:06 a.m.) |
Issued | 14 years, 8 months ago (Dec. 13, 2010) |
Published | 14 years, 8 months ago (Dec. 13, 2010) |
Published Online | 14 years, 8 months ago (Dec. 17, 2010) |
Published Print | 14 years, 8 months ago (Dec. 13, 2010) |
@article{Naydenov_2010, title={Increasing the coherence time of single electron spins in diamond by high temperature annealing}, volume={97}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3527975}, DOI={10.1063/1.3527975}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Naydenov, Boris and Reinhard, Friedemann and Lämmle, Anke and Richter, V. and Kalish, Rafi and D’Haenens-Johansson, Ulrika F. S. and Newton, Mark and Jelezko, Fedor and Wrachtrup, Jörg}, year={2010}, month=dec }