DOI: 10.1063/1.351900. Surface-diffusion model in selective metalorganic chemical vapor deposition

Surface-diffusion model in selective metalorganic chemical vapor deposition

10.1063/1.351900

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Selective epitaxial growth of GaAs was carried out by atmospheric pressure-metalorganic chemical vapor deposition using W and SiO2 masks, and a deposition-free region was clearly observed along the edge of the masks. The surface concentration of the reactant species on the masks was analyzed by a surface-diffusion model and a new method to estimate the surface-diffusion length on the masks was proposed. The surface-diffusion length on SiO2 and W masks were 0.45 and 0.07 μm at 610 °C, respectively. The surface-diffusion length increased with decreasing the substrate temperature and became longer on the masks irradiated by an atom beam.

Bibliography

Yamaguchi, K., Ogasawara, M., & Okamoto, K. (1992). Surface-diffusion model in selective metalorganic chemical vapor deposition. Journal of Applied Physics, 72(12), 5919â5925.

Authors 3

Ko-ichi Yamaguchi (first)
Masaaki Ogasawara (additional)
Kotaro Okamoto (additional)

References 22 Referenced 20

10.1063/1.94196 / Appl. Phys. Lett. (1983)
10.1063/1.100360 / Appl. Phys. Lett. (1988)
10.1063/1.98621 / Appl. Phys. Lett. (1987)
{'key': '2024020416112889500_r4', 'first-page': '29', 'volume': '55', 'year': '1981', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1981)
10.1016/0022-0248(84)90417-2 / J. Cryst. Growth (1984)
{'key': '2024020416112889500_r6', 'first-page': '1228', 'volume': '45', 'year': '1984', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1984)
10.1143/JJAP.24.1666 / Jpn. J. Appl. Phys. (1985)
10.1143/JJAP.25.L10 / Jpn. J. Appl. Phys. (1986)
10.1016/0022-0248(86)90316-7 / J. Cryst. Growth (1986)
10.1063/1.100805 / Appl. Phys. Lett. (1989)
10.1143/JJAP.29.1408 / Jpn. J. Appl. Phys. (1990)
10.1143/JJAP.28.L1489 / Jpn. J. Appl. Phys. (1989)
10.1143/JJAP.29.2351 / Jpn. J. Appl. Phys. (1990)
10.1016/0022-0248(81)90282-7 / J. Cryst. Growth (1981)
{'key': '2024020416112889500_r15'}
{'key': '2024020416112889500_r16', 'first-page': '79', 'volume': '8', 'year': '1979', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1979)
{'key': '2024020416112889500_r17', 'first-page': '345', 'volume': '29', 'year': '1975', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1975)
10.1016/S0022-328X(00)87346-5 / J. Organometallic Chem. (1976)
10.1149/1.2119780 / J. Electrochem. Soc. (1983)
10.1143/JJAP.28.L1486 / Jpn. J. Appl. Phys. (1989)
10.1063/1.99450 / Appl. Phys. Lett. (1988)
10.1016/0022-0248(86)90290-3 / J. Cryst. Growth (1986)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:45 a.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 11:11 a.m.)
Indexed	3 months ago (June 6, 2025, 9:05 a.m.)
Issued	32 years, 8 months ago (Dec. 15, 1992)
Published	32 years, 8 months ago (Dec. 15, 1992)
Published Print	32 years, 8 months ago (Dec. 15, 1992)

Funders 0

None

BibTeX

@article{Yamaguchi_1992, title={Surface-diffusion model in selective metalorganic chemical vapor deposition}, volume={72}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.351900}, DOI={10.1063/1.351900}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Yamaguchi, Ko-ichi and Ogasawara, Masaaki and Okamoto, Kotaro}, year={1992}, month=dec, pages={5919–5925} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        6
      ]
    ],
    "date-time": "2025-06-06T13:05:34Z",
    "timestamp": 1749215134676
  },
  "reference-count": 22,
  "publisher": "AIP Publishing",
  "issue": "12",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1992,
        12,
        15
      ]
    ]
  },
  "abstract": "<jats:p>Selective epitaxial growth of GaAs was carried out by atmospheric pressure-metalorganic chemical vapor deposition using W and SiO2 masks, and a deposition-free region was clearly observed along the edge of the masks. The surface concentration of the reactant species on the masks was analyzed by a surface-diffusion model and a new method to estimate the surface-diffusion length on the masks was proposed. The surface-diffusion length on SiO2 and W masks were 0.45 and 0.07 \u03bcm at 610\u2009\u00b0C, respectively. The surface-diffusion length increased with decreasing the substrate temperature and became longer on the masks irradiated by an atom beam.</jats:p>",
  "DOI": "10.1063/1.351900",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:45:26Z",
    "timestamp": 1027691126000
  },
  "page": "5919-5925",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 20,
  "title": "Surface-diffusion model in selective metalorganic chemical vapor deposition",
  "prefix": "10.1063",
  "volume": "72",
  "author": [
    {
      "given": "Ko-ichi",
      "family": "Yamaguchi",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Electronic Engineering, University of Electro-Communications, Chofuga-oka, Chofu-shi, Tokyo 182, Japan"
        }
      ]
    },
    {
      "given": "Masaaki",
      "family": "Ogasawara",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electronic Engineering, University of Electro-Communications, Chofuga-oka, Chofu-shi, Tokyo 182, Japan"
        }
      ]
    },
    {
      "given": "Kotaro",
      "family": "Okamoto",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electronic Engineering, University of Electro-Communications, Chofuga-oka, Chofu-shi, Tokyo 182, Japan"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020416112889500_r1",
      "doi-asserted-by": "crossref",
      "first-page": "894",
      "DOI": "10.1063/1.94196",
      "volume": "43",
      "year": "1983",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020416112889500_r2",
      "doi-asserted-by": "crossref",
      "first-page": "97",
      "DOI": "10.1063/1.100360",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020416112889500_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1518",
      "DOI": "10.1063/1.98621",
      "volume": "51",
      "year": "1987",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020416112889500_r4",
      "first-page": "29",
      "volume": "55",
      "year": "1981",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020416112889500_r5",
      "doi-asserted-by": "crossref",
      "first-page": "200",
      "DOI": "10.1016/0022-0248(84)90417-2",
      "volume": "68",
      "year": "1984",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020416112889500_r6",
      "first-page": "1228",
      "volume": "45",
      "year": "1984",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020416112889500_r7",
      "doi-asserted-by": "crossref",
      "first-page": "1666",
      "DOI": "10.1143/JJAP.24.1666",
      "volume": "24",
      "year": "1985",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020416112889500_r8",
      "doi-asserted-by": "crossref",
      "first-page": "L10",
      "DOI": "10.1143/JJAP.25.L10",
      "volume": "25",
      "year": "1986",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020416112889500_r9",
      "doi-asserted-by": "crossref",
      "first-page": "303",
      "DOI": "10.1016/0022-0248(86)90316-7",
      "volume": "77",
      "year": "1986",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020416112889500_r10",
      "doi-asserted-by": "crossref",
      "first-page": "910",
      "DOI": "10.1063/1.100805",
      "volume": "54",
      "year": "1989",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020416112889500_r11",
      "doi-asserted-by": "crossref",
      "first-page": "1408",
      "DOI": "10.1143/JJAP.29.1408",
      "volume": "29",
      "year": "1990",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020416112889500_r12",
      "doi-asserted-by": "crossref",
      "first-page": "L1489",
      "DOI": "10.1143/JJAP.28.L1489",
      "volume": "28",
      "year": "1989",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020416112889500_r13",
      "doi-asserted-by": "crossref",
      "first-page": "2351",
      "DOI": "10.1143/JJAP.29.2351",
      "volume": "29",
      "year": "1990",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020416112889500_r14",
      "doi-asserted-by": "crossref",
      "first-page": "145",
      "DOI": "10.1016/0022-0248(81)90282-7",
      "volume": "55",
      "year": "1981",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020416112889500_r15"
    },
    {
      "key": "2024020416112889500_r16",
      "first-page": "79",
      "volume": "8",
      "year": "1979",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020416112889500_r17",
      "first-page": "345",
      "volume": "29",
      "year": "1975",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020416112889500_r18",
      "doi-asserted-by": "crossref",
      "first-page": "9",
      "DOI": "10.1016/S0022-328X(00)87346-5",
      "volume": "114",
      "year": "1976",
      "journal-title": "J. Organometallic Chem."
    },
    {
      "key": "2024020416112889500_r19",
      "doi-asserted-by": "crossref",
      "first-page": "675",
      "DOI": "10.1149/1.2119780",
      "volume": "130",
      "year": "1983",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020416112889500_r20",
      "doi-asserted-by": "crossref",
      "first-page": "L1486",
      "DOI": "10.1143/JJAP.28.L1486",
      "volume": "28",
      "year": "1989",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020416112889500_r21",
      "doi-asserted-by": "crossref",
      "first-page": "480",
      "DOI": "10.1063/1.99450",
      "volume": "52",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020416112889500_r22",
      "doi-asserted-by": "crossref",
      "first-page": "108",
      "DOI": "10.1016/0022-0248(86)90290-3",
      "volume": "77",
      "year": "1986",
      "journal-title": "J. Cryst. Growth"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/72/12/5919/18653850/5919_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/72/12/5919/18653850/5919_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T16:11:41Z",
    "timestamp": 1707063101000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/72/12/5919/176655/Surface-diffusion-model-in-selective-metalorganic"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1992,
        12,
        15
      ]
    ]
  },
  "references-count": 22,
  "journal-issue": {
    "issue": "12",
    "published-print": {
      "date-parts": [
        [
          1992,
          12,
          15
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.351900",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1992,
        12,
        15
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1992,
        12,
        15
      ]
    ]
  }
}