DOI: 10.1063/1.351145. The decrease of ‘‘random telegraph signal’’ noise in metal-oxide-semiconductor field-effect transistors when cycled from inversion to accumulation

The decrease of ‘‘random telegraph signal’’ noise in metal-oxide-semiconductor field-effect transistors when cycled from inversion to accumulation

10.1063/1.351145

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The low-frequency (LF) noise behavior of metal-oxide-semiconductor field-effect transistors (MOSFETs) is studied when cycled between inversion and accumulation. On large-area devices the decrease of the LF noise is systematically found, and supports the observations by Bloom and Nemirovsky [Appl. Phys. Lett. 58, 1664 (1991)]. The random telegraph signal (RTS) noise observed in small (submicrometer) devices disappears when the transistor is cycled into accumulation. The drop in LF noise observed may thus be explained by the fact that most or all of the RTSs, which are caused by carrier trapping into slow oxide states, no longer contribute to the noise of the system. The method indicates a possibility to separate the contributions of different sources of 1/f noise in MOSFETs.

Bibliography

Dierickx, B., & Simoen, E. (1992). The decrease of âârandom telegraph signalââ noise in metal-oxide-semiconductor field-effect transistors when cycled from inversion to accumulation. Journal of Applied Physics, 71(4), 2028â2029.

Authors 2

B. Dierickx (first)
E. Simoen (additional)

References 6 Referenced 53

10.1063/1.105130 / Appl. Phys. Lett. (1991)
10.1080/00018738900101122 / Adv. Phys. (1989)
10.1103/PhysRevLett.52.228 / Phys. Rev. Lett. (1984)
{'key': '2024020415013111700_r4', 'first-page': '1270', 'volume': '48', 'year': '1985', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1985)
{'key': '2024020415013111700_r5', 'first-page': '480', 'volume': '44', 'year': '1981', 'journal-title': 'Rep. Prog. Phys.'} / Rep. Prog. Phys. (1981)
10.1109/16.119033 / IEEE Trans. Electron Devices (1991)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:27 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 10:01 a.m.)
Indexed	4 months, 1 week ago (April 19, 2025, 1:07 a.m.)
Issued	33 years, 6 months ago (Feb. 15, 1992)
Published	33 years, 6 months ago (Feb. 15, 1992)
Published Print	33 years, 6 months ago (Feb. 15, 1992)

Funders 0

None

BibTeX

@article{Dierickx_1992, title={The decrease of ‘“random telegraph signal”’ noise in metal-oxide-semiconductor field-effect transistors when cycled from inversion to accumulation}, volume={71}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.351145}, DOI={10.1063/1.351145}, number={4}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Dierickx, B. and Simoen, E.}, year={1992}, month=feb, pages={2028–2029} }

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