DOI: 10.1063/1.350802. Generation and recovery of strain in 28Si-implanted pseudomorphic GeSi films on Si(100)

Generation and recovery of strain in 28Si-implanted pseudomorphic GeSi films on Si(100)

10.1063/1.350802

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Effects of ion implantation of 320 keV 28Si at room temperature in pseudomorphic metastable GexSi1−x (x≊0.04, 0.09, 0.13) layers ∼170 nm thick grown on Si(100) wafers were characterized by x-ray double-crystal diffractometry and MeV 4He channeling spectrometry. The damage induced by implantation produces additional compressive strain in the GexSi1−x layers, superimposed on the intrinsic compressive strain of the heterostructures. This strain rises with the dose proportionally for doses below several times 1014 28Si/cm2. Furthermore, for a given dose, the strain increases with the Ge content in the layer. Upon thermal processing, the damage anneals out and the strain recovers to the value before implantation. Amorphized samples (doses of greater than 2×1015 28Si/cm2) regrow poorly.

Bibliography

Bai, G., & Nicolet, M.-A. (1992). Generation and recovery of strain in 28Si-implanted pseudomorphic GeSi films on Si(100). Journal of Applied Physics, 71(9), 4227â4229.

Authors 2

G. Bai (first)
M.-A. Nicolet (additional)

References 13 Referenced 18

10.1063/1.104602 / Appl. Phys. Lett. (1991)
10.1063/1.104488 / Appl. Phys. Lett. (1991)
10.1063/1.100828 / Appl. Phys. Lett. (1989)
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{'key': '2024020415232298300_r10', 'first-page': '118', 'volume': '27', 'year': '1974', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1974)
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{'key': '2024020415232298300_r13'}

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:45 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 10:23 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 6:47 p.m.)
Issued	33 years, 3 months ago (May 1, 1992)
Published	33 years, 3 months ago (May 1, 1992)
Published Print	33 years, 3 months ago (May 1, 1992)

Funders 0

None

BibTeX

@article{Bai_1992, title={Generation and recovery of strain in 28Si-implanted pseudomorphic GeSi films on Si(100)}, volume={71}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.350802}, DOI={10.1063/1.350802}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Bai, G. and Nicolet, M.-A.}, year={1992}, month=may, pages={4227–4229} }

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