Abstract
Using the secondary-ion mass spectrometry profile of the SiGe-base heterojunction bipolar transistor of Patton et al. [IEEE Trans. Electron. Dev. 11, 171 (1990)] we retrieve the hole drift mobility for strained Si1−xGex (SiGe) layers up to Ge fractions of 10% and for dopant levels in the range 1016–1019 cm−3. In contrast to theoretically calculated values, the results show a significant reduction in the hole mobility.
References
8
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:15 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 4, 2024, 10:21 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 4, 2024, 10:40 a.m.) |
Issued | 33 years, 4 months ago (May 1, 1992) |
Published | 33 years, 4 months ago (May 1, 1992) |
Published Print | 33 years, 4 months ago (May 1, 1992) |
@article{Manku_1992, title={On the reduction of hole mobility in strained p-SiGe layers}, volume={71}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.350763}, DOI={10.1063/1.350763}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Manku, T. and Jain, S. C. and Nathan, A.}, year={1992}, month=may, pages={4618–4619} }