Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

Using the secondary-ion mass spectrometry profile of the SiGe-base heterojunction bipolar transistor of Patton et al. [IEEE Trans. Electron. Dev. 11, 171 (1990)] we retrieve the hole drift mobility for strained Si1−xGex (SiGe) layers up to Ge fractions of 10% and for dopant levels in the range 1016–1019 cm−3. In contrast to theoretically calculated values, the results show a significant reduction in the hole mobility.

Bibliography

Manku, T., Jain, S. C., & Nathan, A. (1992). On the reduction of hole mobility in strained p-SiGe layers. Journal of Applied Physics, 71(9), 4618–4619.

Authors 3
  1. T. Manku (first)
  2. S. C. Jain (additional)
  3. A. Nathan (additional)
References 8 Referenced 5
  1. 10.1080/00018739000101491 / Adv. Phys. (1990)
  2. 10.1088/0268-1242/6/7/001 / Semicond. Sci. Technol. (1991)
  3. 10.1103/PhysRev.99.1810 / Phys. Rev. (1955)
  4. {'key': '2024020415210743600_r4', 'first-page': '437', 'volume': '33', 'year': '1960', 'journal-title': 'Helv. Phys. Acta'} / Helv. Phys. Acta (1960)
  5. 10.1063/1.102147 / Appl. Phys. Lett. (1989)
  6. 10.1109/55.116962 / IEEE Electron Dev. Lett. (1991)
  7. 10.1109/55.61782 / IEEE Electron Dev. Lett. (1990)
  8. {'key': '2024020415210743600_r8'}
Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:15 a.m.)
Deposited 1 year, 6 months ago (Feb. 4, 2024, 10:21 a.m.)
Indexed 1 year, 6 months ago (Feb. 4, 2024, 10:40 a.m.)
Issued 33 years, 4 months ago (May 1, 1992)
Published 33 years, 4 months ago (May 1, 1992)
Published Print 33 years, 4 months ago (May 1, 1992)
Funders 0

None

@article{Manku_1992, title={On the reduction of hole mobility in strained p-SiGe layers}, volume={71}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.350763}, DOI={10.1063/1.350763}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Manku, T. and Jain, S. C. and Nathan, A.}, year={1992}, month=may, pages={4618–4619} }