DOI: 10.1063/1.3505354. Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model

Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model

10.1063/1.3505354

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The relations between the reset current IR, room temperature filament resistance R0, and third harmonic coefficient B0 were evaluated by a conical filament model. It was found that IR∼1/R0 when the filament is either very weak, where the filament is more conical, or quite strong, where the filament is more cylindrical. The physical implication of the B0 was also understood from the materials properties. The coherence between the model expectations for the bulkier conical filaments, typically found in TiO2, and the more random-network like filaments, typically found in NiO, suggests a common switching mechanism works in both materials.

Bibliography

Kim, K. M., Lee, M. H., Kim, G. H., Song, S. J., Seok, J. Y., Yoon, J. H., & Hwang, C. S. (2010). Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model. Applied Physics Letters, 97(16).

Authors 7

Kyung Min Kim (first)
Min Hwan Lee (additional)
Gun Hwan Kim (additional)
Seul Ji Song (additional)
Jun Yeong Seok (additional)
Jung Ho Yoon (additional)
Cheol Seong Hwang (additional)

References 16 Referenced 26

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10.1063/1.2001146 / J. Appl. Phys. (2005)
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10.1002/adma.200900375 / Adv. Mater. (Weinheim, Ger.) (2009)
10.1038/nnano.2009.456 / Nat. Nanotechnol. (2010)
10.1002/adma.201000186 / Adv. Mater. (Weinheim, Ger.) (2010)
10.1063/1.3108088 / Appl. Phys. Lett. (2009)
10.1063/1.2749846 / Appl. Phys. Lett. (2007)
10.1002/adma.200702024 / Adv. Mater. (Weinheim, Ger.) (2008)
10.1063/1.2813617 / Appl. Phys. Lett. (2007)
10.1063/1.2963983 / Appl. Phys. Lett. (2008)
10.1063/1.3126019 / Appl. Phys. Lett. (2009)
10.1063/1.1968416 / Appl. Phys. Lett. (2005)
10.1063/1.3237167 / Appl. Phys. Lett. (2009)
{'volume': '2007', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '775', 'key': '2023073109100872300_c15'} / Tech. Dig. - Int. Electron Devices Meet.
10.1063/1.3036532 / Appl. Phys. Lett. (2008)

Dates

Type	When
Created	14 years, 10 months ago (Oct. 22, 2010, 9:02 p.m.)
Deposited	2 years ago (July 31, 2023, 5:10 a.m.)
Indexed	3 weeks, 6 days ago (July 30, 2025, 6:56 a.m.)
Issued	14 years, 10 months ago (Oct. 18, 2010)
Published	14 years, 10 months ago (Oct. 18, 2010)
Published Online	14 years, 10 months ago (Oct. 22, 2010)
Published Print	14 years, 10 months ago (Oct. 18, 2010)

Funders 0

None

BibTeX

@article{Kim_2010, title={Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model}, volume={97}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3505354}, DOI={10.1063/1.3505354}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kim, Kyung Min and Lee, Min Hwan and Kim, Gun Hwan and Song, Seul Ji and Seok, Jun Yeong and Yoon, Jung Ho and Hwang, Cheol Seong}, year={2010}, month=oct }

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