DOI: 10.1063/1.3505311. Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide

Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide

10.1063/1.3505311

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Using aluminum oxide (Al2O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p-type and 8.1 cm/s on n-type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to &lt;2 nm/min. The excellent passivation level is predominantly assigned to a high negative fixed charge density of Qf=−(4±1)×1012 cm−2 in the Al2O3 films. We demonstrate an excellent thermal stability of the passivation quality.

Bibliography

Werner, F., Veith, B., Tiba, V., Poodt, P., Roozeboom, F., Brendel, R., & Schmidt, J. (2010). Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide. Applied Physics Letters, 97(16).

Authors 7

Florian Werner (first)
Boris Veith (additional)
Veronica Tiba (additional)
Paul Poodt (additional)
Fred Roozeboom (additional)
Rolf Brendel (additional)
Jan Schmidt (additional)

References 11 Referenced 89

10.1063/1.3021091 / J. Appl. Phys. (2008)
10.1016/j.solmat.2006.04.014 / Sol. Energy Mater. Sol. Cells (2006)
10.1063/1.2963707 / J. Appl. Phys. (2008)
10.1002/pssr.200903272 / Phys. Status Solidi (RRL) (2009)
10.1002/pssr.200903334 / Phys. Status Solidi (RRL) (2010)
10.1063/1.3250157 / Appl. Phys. Lett. (2009)
10.1002/pssr.200903140 / Phys. Status Solidi (RRL) (2009)
{'volume-title': 'Proceedings of the 35th IEEE Photovoltaic Specialists Conference', 'key': '2023073109105876700_c8'} / Proceedings of the 35th IEEE Photovoltaic Specialists Conference
10.1002/adma.201000766 / Adv. Mater. (Weinheim, Ger.) (2010)
10.1063/1.357521 / J. Appl. Phys. (1994)
{'first-page': '162', 'volume-title': 'Proceedings of the 29th IEEE Photovoltaic Specialists Conference', 'year': '2002', 'key': '2023073109105876700_c11'} / Proceedings of the 29th IEEE Photovoltaic Specialists Conference (2002)

Dates

Type	When
Created	14 years, 10 months ago (Oct. 20, 2010, 6:15 p.m.)
Deposited	2 years ago (July 31, 2023, 5:11 a.m.)
Indexed	2 weeks, 3 days ago (Aug. 6, 2025, 8:23 a.m.)
Issued	14 years, 10 months ago (Oct. 18, 2010)
Published	14 years, 10 months ago (Oct. 18, 2010)
Published Online	14 years, 10 months ago (Oct. 20, 2010)
Published Print	14 years, 10 months ago (Oct. 18, 2010)

Funders 0

None

BibTeX

@article{Werner_2010, title={Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide}, volume={97}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3505311}, DOI={10.1063/1.3505311}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Werner, Florian and Veith, Boris and Tiba, Veronica and Poodt, Paul and Roozeboom, Fred and Brendel, Rolf and Schmidt, Jan}, year={2010}, month=oct }

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