DOI: 10.1063/1.3501139. Control of domain configurations and sizes in crystallographically engineered ferroelectric single crystals: Phase field modeling

Control of domain configurations and sizes in crystallographically engineered ferroelectric single crystals: Phase field modeling

10.1063/1.3501139

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Computer simulation is performed to study the mechanisms for controlling domain configurations and sizes in crystallographically engineered ferroelectric crystals. It is found that minimal domain sizes and highest domain wall densities are obtained with intermediate electric field applied along nonpolar axis of ferroelectric crystals, while lower and higher fields produce coarser domains, and temperature also plays important role in domain size control. The simulation shows that selection of polar domain variants by external electric field during nucleation stage of ferroelectric phase transition significantly affects subsequent domain growth and evolution kinetics, controlling the formation and sizes of lamellar domains.

Bibliography

Rao, W.-F., Xiao, K.-W., Cheng, T.-L., Zhou, J. E., & Wang, Y. U. (2010). Control of domain configurations and sizes in crystallographically engineered ferroelectric single crystals: Phase field modeling. Applied Physics Letters, 97(16).

Authors 5

Wei-Feng Rao (first)
Ke-Wei Xiao (additional)
Tian-Le Cheng (additional)
Jie E. Zhou (additional)
Yu U. Wang (additional)

References 16 Referenced 12

10.1063/1.365983 / J. Appl. Phys. (1997)
10.1063/1.371120 / J. Appl. Phys. (1999)
10.1063/1.1957130 / J. Appl. Phys. (2005)
10.1063/1.2435584 / Appl. Phys. Lett. (2007)
10.1007/s10853-009-3663-9 / J. Mater. Sci. (2009)
10.1063/1.367330 / J. Appl. Phys. (1998)
10.1063/1.2172744 / Appl. Phys. Lett. (2006)
10.1080/14786444908561372 / Philos. Mag. (1949)
10.1080/00150198508008964 / Ferroelectrics (1985)
10.1063/1.2736276 / Appl. Phys. Lett. (2007)
10.1063/1.3371722 / Appl. Phys. Lett. (2010)
10.1103/PhysRevLett.91.197601 / Phys. Rev. Lett. (2003)
10.1063/1.1599632 / J. Appl. Phys. (2003)
10.1103/PhysRevB.73.014113 / Phys. Rev. B (2006)
10.1103/PhysRevB.74.104109 / Phys. Rev. B (2006)
10.1103/PhysRevB.76.024108 / Phys. Rev. B (2007)

Dates

Type	When
Created	14 years, 10 months ago (Oct. 18, 2010, 6:32 p.m.)
Deposited	2 years, 1 month ago (July 31, 2023, 5:19 a.m.)
Indexed	1 month ago (July 30, 2025, 6:55 a.m.)
Issued	14 years, 10 months ago (Oct. 18, 2010)
Published	14 years, 10 months ago (Oct. 18, 2010)
Published Online	14 years, 10 months ago (Oct. 18, 2010)
Published Print	14 years, 10 months ago (Oct. 18, 2010)

Funders 0

None

BibTeX

@article{Rao_2010, title={Control of domain configurations and sizes in crystallographically engineered ferroelectric single crystals: Phase field modeling}, volume={97}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3501139}, DOI={10.1063/1.3501139}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rao, Wei-Feng and Xiao, Ke-Wei and Cheng, Tian-Le and Zhou, Jie E. and Wang, Yu U.}, year={2010}, month=oct }

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