DOI: 10.1063/1.3499306. Oxygen vacancies and donor impurities in β-Ga2O3

Oxygen vacancies and donor impurities in β-Ga2O3

10.1063/1.3499306

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Using hybrid functionals we have investigated the role of oxygen vacancies and various impurities in the electrical and optical properties of the transparent conducting oxide β-Ga2O3. We find that oxygen vacancies are deep donors, and thus cannot explain the unintentional n-type conductivity. Instead, we attribute the conductivity to common background impurities such as silicon and hydrogen. Monatomic hydrogen has low formation energies and acts as a shallow donor in both interstitial and substitutional configurations. We also explore other dopants, where substitutional forms of Si, Ge, Sn, F, and Cl are shown to behave as shallow donors.

Bibliography

Varley, J. B., Weber, J. R., Janotti, A., & Van de Walle, C. G. (2010). Oxygen vacancies and donor impurities in Î²-Ga2O3. Applied Physics Letters, 97(14).

Authors 4

J. B. Varley (first)
J. R. Weber (additional)
A. Janotti (additional)
C. G. Van de Walle (additional)

References 30 Referenced 919

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Dates

Type	When
Created	14 years, 10 months ago (Oct. 6, 2010, 6:27 p.m.)
Deposited	2 years ago (Aug. 6, 2023, 3:38 a.m.)
Indexed	32 minutes ago (Sept. 3, 2025, 7:11 a.m.)
Issued	14 years, 10 months ago (Oct. 4, 2010)
Published	14 years, 10 months ago (Oct. 4, 2010)
Published Online	14 years, 10 months ago (Oct. 6, 2010)
Published Print	14 years, 10 months ago (Oct. 4, 2010)

Funders 0

None

BibTeX

@article{Varley_2010, title={Oxygen vacancies and donor impurities in β-Ga2O3}, volume={97}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3499306}, DOI={10.1063/1.3499306}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Varley, J. B. and Weber, J. R. and Janotti, A. and Van de Walle, C. G.}, year={2010}, month=oct }

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