Abstract
We revise the possibility of having an amplified surface potential in ferroelectric field-effect transistors pointed out by [S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008)]. We show that the negative-capacitance regime that allows for such amplification is actually bounded by the appearance of multidomain ferroelectricity. This imposes a severe limit to the maximum step-up of the surface potential obtainable in the device. We indicate new device design rules taking into account this scenario.
References
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Dates
Type | When |
---|---|
Created | 14 years, 10 months ago (Sept. 30, 2010, 8:11 p.m.) |
Deposited | 2 years ago (Aug. 8, 2023, 5:58 a.m.) |
Indexed | 2 weeks, 5 days ago (Aug. 2, 2025, 12:22 a.m.) |
Issued | 14 years, 10 months ago (Sept. 27, 2010) |
Published | 14 years, 10 months ago (Sept. 27, 2010) |
Published Online | 14 years, 10 months ago (Sept. 30, 2010) |
Published Print | 14 years, 10 months ago (Sept. 27, 2010) |
@article{Cano_2010, title={Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors}, volume={97}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3494533}, DOI={10.1063/1.3494533}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cano, A. and Jiménez, D.}, year={2010}, month=sep }