DOI: 10.1063/1.348700. The interfacial morphology of strained epitaxial In<i>x</i>Ga1−<i>x</i>As/GaAs

The interfacial morphology of strained epitaxial InxGa1−xAs/GaAs

10.1063/1.348700

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The microstructure of strained layers of InxGa1−xAs/GaAs grown by molecular-beam epitaxy has been investigated by transmission electron microscopy. lt was found that the formation of irregular interfacial morphologies of the InxGa1−xAs layers was due to a transition in growth mode from two-dimensional (layer-by-layer growth) to three-dimensional nucleation via island formation. It was also found that the occurrence of irregular growth surfaces of epitaxial layers was dependent upon inhomogeneous lattice strains induced by the formation of islands. A possible role of lattice strain for the formation of irregular growth surfaces was also discussed.

Bibliography

Yao, J. Y., Andersson, T. G., & Dunlop, G. L. (1991). The interfacial morphology of strained epitaxial InxGa1âxAs/GaAs. Journal of Applied Physics, 69(4), 2224â2230.

Authors 3

J. Y. Yao (first)
T. G. Andersson (additional)
G. L. Dunlop (additional)

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:43 a.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 7:44 a.m.)
Indexed	1 year, 7 months ago (Feb. 6, 2024, 9:01 p.m.)
Issued	34 years, 6 months ago (Feb. 15, 1991)
Published	34 years, 6 months ago (Feb. 15, 1991)
Published Print	34 years, 6 months ago (Feb. 15, 1991)

Funders 0

None

BibTeX

@article{Yao_1991, title={The interfacial morphology of strained epitaxial InxGa1−xAs/GaAs}, volume={69}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.348700}, DOI={10.1063/1.348700}, number={4}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Yao, J. Y. and Andersson, T. G. and Dunlop, G. L.}, year={1991}, month=feb, pages={2224–2230} }

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