Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We theoretically compute the thermal conductivity of SiGe alloy nanowires as a function of nanowire diameter, alloy concentration, and temperature, obtaining a satisfactory quantitative agreement with experimental results. Our results account for the weaker diameter dependence of the thermal conductivity recently observed in Si1−xGex nanowires (x<0.1), as compared to pure Si nanowires. We also present calculations in the full range of alloy concentrations, 0≤x≤1, which may serve as a basis for comparison with future experiments on high alloy concentration nanowires.

Bibliography

Wang, Z., & Mingo, N. (2010). Diameter dependence of SiGe nanowire thermal conductivity. Applied Physics Letters, 97(10).

Authors 2
  1. Zhao Wang (first)
  2. Natalio Mingo (additional)
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Dates
Type When
Created 14 years, 11 months ago (Sept. 8, 2010, 8:02 p.m.)
Deposited 2 years, 1 month ago (June 25, 2023, 9:35 a.m.)
Indexed 2 weeks, 5 days ago (Aug. 2, 2025, 12:09 a.m.)
Issued 14 years, 11 months ago (Sept. 6, 2010)
Published 14 years, 11 months ago (Sept. 6, 2010)
Published Online 14 years, 11 months ago (Sept. 8, 2010)
Published Print 14 years, 11 months ago (Sept. 6, 2010)
Funders 0

None

@article{Wang_2010, title={Diameter dependence of SiGe nanowire thermal conductivity}, volume={97}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3486171}, DOI={10.1063/1.3486171}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wang, Zhao and Mingo, Natalio}, year={2010}, month=sep }