DOI: 10.1063/1.3486122. Multiple-level threshold switching behavior of In2Se3 confined in a nanostructured silicon substrate

Multiple-level threshold switching behavior of In2Se3 confined in a nanostructured silicon substrate

10.1063/1.3486122

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report the experimental observation of an intriguing behavior of multiple-level threshold switching of Si–In2Se3 heterojunction devices consisting of high-density arrays of sharp points of nanometer radius of curvature. Comparison with devices of similar junction area but without the sharp points shows that the multiple-level switching behavior is unique to devices with junctions consisting of sharp points.

Bibliography

Lee, J. Y., Sun, K., Li, B., Xie, Y.-H., Wei, X., & Russell, T. P. (2010). Multiple-level threshold switching behavior of In2Se3 confined in a nanostructured silicon substrate. Applied Physics Letters, 97(9).

Authors 6

Jae Young Lee (first)
Ke Sun (additional)
Biyun Li (additional)
Ya-Hong Xie (additional)
Xinyu Wei (additional)
Thomas P. Russell (additional)

References 10 Referenced 9

10.1103/PhysRevLett.21.1450 / Phys. Rev. Lett. (1968)
10.1109/T-ED.1973.17617 / IEEE Trans. Electron Devices (1973)
{'volume': '2002', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '923', 'key': '2023070302095720300_c3'} / Tech. Dig. - Int. Electron Devices Meet.
10.1063/1.328036 / J. Appl. Phys. (1980)
{'year': '2004', 'key': '2023070302095720300_c5', 'first-page': '209'} (2004)
10.1021/ja0625071 / J. Am. Chem. Soc. (2006)
10.1063/1.2753699 / Appl. Phys. Lett. (2007)
10.1038/nnano.2007.291 / Nat. Nanotechnol. (2007)
10.1109/TMAG.2005.851858 / IEEE Trans. Magn. (2005)
10.1016/0169-4332(95)00357-6 / Appl. Surf. Sci. (1996)

Dates

Type	When
Created	14 years, 11 months ago (Sept. 3, 2010, 7:57 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 10:10 p.m.)
Indexed	3 weeks, 2 days ago (July 30, 2025, 6:55 a.m.)
Issued	14 years, 11 months ago (Aug. 30, 2010)
Published	14 years, 11 months ago (Aug. 30, 2010)
Published Online	14 years, 11 months ago (Sept. 3, 2010)
Published Print	14 years, 11 months ago (Aug. 30, 2010)

Funders 0

None

BibTeX

@article{Lee_2010, title={Multiple-level threshold switching behavior of In2Se3 confined in a nanostructured silicon substrate}, volume={97}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3486122}, DOI={10.1063/1.3486122}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lee, Jae Young and Sun, Ke and Li, Biyun and Xie, Ya-Hong and Wei, Xinyu and Russell, Thomas P.}, year={2010}, month=aug }

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