DOI: 10.1063/1.3479915. Local strain in tunneling transistors based on graphene nanoribbons

Local strain in tunneling transistors based on graphene nanoribbons

10.1063/1.3479915

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A band-to-band tunneling field-effect transistor (FET) can achieve a subthreshold slope steeper than 60 mV/dec at room temperature, but the on-current is low due to existence of the tunneling barrier. Graphene has a monolayer-thin body which is amenable to strain. By using self-consistent quantum transport simulations, we show that with local strain applied at the tunneling junction between the source and the channel in a graphene nanoribbon tunneling FET, the on-current can be significantly improved by over a factor of 10 with the same off-current, no matter at the ballistic limit or in the presence of inelastic phonon scattering.

Bibliography

Lu, Y., & Guo, J. (2010). Local strain in tunneling transistors based on graphene nanoribbons. Applied Physics Letters, 97(7).

Authors 2

Yang Lu (first)
Jing Guo (additional)

References 23 Referenced 26

{'author': 'International Roadmap for Semiconductors', 'key': '2023070302002865000_c1'} by International Roadmap for Semiconductors
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Dates

Type	When
Created	15 years ago (Aug. 17, 2010, 7:24 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 10 p.m.)
Indexed	3 weeks, 2 days ago (July 30, 2025, 6:55 a.m.)
Issued	15 years ago (Aug. 16, 2010)
Published	15 years ago (Aug. 16, 2010)
Published Online	15 years ago (Aug. 17, 2010)
Published Print	15 years ago (Aug. 16, 2010)

Funders 0

None

BibTeX

@article{Lu_2010, title={Local strain in tunneling transistors based on graphene nanoribbons}, volume={97}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3479915}, DOI={10.1063/1.3479915}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lu, Yang and Guo, Jing}, year={2010}, month=aug }

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