DOI: 10.1063/1.346902. Radiation-induced charge trapping in implanted buried oxides

Radiation-induced charge trapping in implanted buried oxides

10.1063/1.346902

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We investigate the response of buried oxide layers formed by oxygen implantation to total dose x-ray irradiation. The characterization is based on C-V measurements of the buried oxide capacitor and on back-channel transistor measurements. Reduced charge trapping is found for material implanted with a lower oxygen dose, annealed at higher temperatures, and annealed for longer times. Also, total-dose irradiation was found to generate few interface traps. A particularly interesting result is that an increase in the concentration of shallow donors with x-ray dose was observed for certain samples. This increase in the donor concentration was observed only in the top Si film.

Bibliography

Brady, F. T., Li, S. S., & Krull, W. A. (1990). Radiation-induced charge trapping in implanted buried oxides. Journal of Applied Physics, 68(12), 6143â6148.

Authors 3

Frederick T. Brady (first)
Sheng S. Li (additional)
Wade A. Krull (additional)

References 10 Referenced 13

{'key': '2024020412253741700_r1', 'first-page': '1702', 'volume': 'NS-33', 'year': '1986', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1986)
{'key': '2024020412253741700_r2', 'first-page': '1692', 'volume': 'NS-34', 'year': '1987', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1987)
10.1016/0038-1101(85)90009-7 / Solid State Electron. (1985)
10.1063/1.99262 / Appl. Phys. Lett. (1988)
{'key': '2024020412253741700_r5'}
{'key': '2024020412253741700_r6', 'first-page': '2187', 'volume': 'NS-36', 'year': '1989', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1989)
{'key': '2024020412253741700_r7'}
{'key': '2024020412253741700_r8'}
10.1063/1.328278 / J. Appl. Phys. (1980)
10.1063/1.339409 / J. Appl. Phys. (1987)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9 a.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 7:25 a.m.)
Indexed	1 year, 7 months ago (Feb. 4, 2024, 11:59 a.m.)
Issued	34 years, 8 months ago (Dec. 15, 1990)
Published	34 years, 8 months ago (Dec. 15, 1990)
Published Print	34 years, 8 months ago (Dec. 15, 1990)

Funders 0

None

BibTeX

@article{Brady_1990, title={Radiation-induced charge trapping in implanted buried oxides}, volume={68}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.346902}, DOI={10.1063/1.346902}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Brady, Frederick T. and Li, Sheng S. and Krull, Wade A.}, year={1990}, month=dec, pages={6143–6148} }

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