DOI: 10.1063/1.346852. Grain size dependence of the thermal conductivity of polycrystalline chemical vapor deposited β-SiC at low temperatures

Grain size dependence of the thermal conductivity of polycrystalline chemical vapor deposited β-SiC at low temperatures

10.1063/1.346852

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Thermal conductivity data of polycrystalline chemical vapor deposited cubic silicon carbide are calculated from thermal diffusivity and heat capacity data in the temperature region of 80–300 K. Below 200 K, a linear dependence of the thermal conductivity with the product of grain size of the silicon carbide and cubic temperature is observed. This is explained in terms of phonon scattering by the grain boundaries.

Bibliography

Collins, A. K., Pickering, M. A., & Taylor, R. L. (1990). Grain size dependence of the thermal conductivity of polycrystalline chemical vapor deposited Î²-SiC at low temperatures. Journal of Applied Physics, 68(12), 6510â6512.

Authors 3

A. K. Collins (first)
M. A. Pickering (additional)
R. L. Taylor (additional)

References 6 Referenced 64

10.1016/S0031-8914(38)80009-4 / Physica (1938)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:07 a.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 7:28 a.m.)
Indexed	1 month ago (Aug. 3, 2025, 12:03 a.m.)
Issued	34 years, 8 months ago (Dec. 15, 1990)
Published	34 years, 8 months ago (Dec. 15, 1990)
Published Print	34 years, 8 months ago (Dec. 15, 1990)

Funders 0

None

BibTeX

@article{Collins_1990, title={Grain size dependence of the thermal conductivity of polycrystalline chemical vapor deposited β-SiC at low temperatures}, volume={68}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.346852}, DOI={10.1063/1.346852}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Collins, A. K. and Pickering, M. A. and Taylor, R. L.}, year={1990}, month=dec, pages={6510–6512} }

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