DOI: 10.1063/1.3467450. Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3

Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3

10.1063/1.3467450

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT) thin films. At low gate voltages, PZT behaves as a high-κ dielectric with κ up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50–110 meV and a time constant of 6 h at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at the graphene-PZT interface. This robust hysteresis can potentially be used to construct graphene-ferroelectric hybrid memory devices.

Bibliography

Hong, X., Hoffman, J., Posadas, A., Zou, K., Ahn, C. H., & Zhu, J. (2010). Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3. Applied Physics Letters, 97(3).

Authors 6

X. Hong (first)
J. Hoffman (additional)
A. Posadas (additional)
K. Zou (additional)
C. H. Ahn (additional)
J. Zhu (additional)

References 21 Referenced 117

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10.1103/PhysRevLett.102.136808 / Phys. Rev. Lett. (2009)
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See supplementary material at http://dx.doi.org/10.1063/1.3467450 for characterization details of the PZT films and resistance hysteresis observed on a 2-LG device.
10.1063/1.1358848 / Appl. Phys. Lett. (2001)
10.1103/PhysRevLett.96.127601 / Phys. Rev. Lett. (2006)
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Dates

Type	When
Created	15 years ago (July 23, 2010, 6:22 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 9:57 p.m.)
Indexed	3 weeks, 1 day ago (July 30, 2025, 6:55 a.m.)
Issued	15 years, 1 month ago (July 19, 2010)
Published	15 years, 1 month ago (July 19, 2010)
Published Online	15 years ago (July 23, 2010)
Published Print	15 years, 1 month ago (July 19, 2010)

Funders 0

None

BibTeX

@article{Hong_2010, title={Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3}, volume={97}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3467450}, DOI={10.1063/1.3467450}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hong, X. and Hoffman, J. and Posadas, A. and Zou, K. and Ahn, C. H. and Zhu, J.}, year={2010}, month=jul }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:55:44Z",
    "timestamp": 1753872944410,
    "version": "3.41.2"
  },
  "reference-count": 21,
  "publisher": "AIP Publishing",
  "issue": "3",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2010,
        7,
        19
      ]
    ]
  },
  "abstract": "<jats:p>We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT) thin films. At low gate voltages, PZT behaves as a high-\u03ba dielectric with \u03ba up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50\u2013110 meV and a time constant of 6 h at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at the graphene-PZT interface. This robust hysteresis can potentially be used to construct graphene-ferroelectric hybrid memory devices.</jats:p>",
  "DOI": "10.1063/1.3467450",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2010,
        7,
        23
      ]
    ],
    "date-time": "2010-07-23T22:22:59Z",
    "timestamp": 1279923779000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 117,
  "title": "Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3",
  "prefix": "10.1063",
  "volume": "97",
  "author": [
    {
      "given": "X.",
      "family": "Hong",
      "sequence": "first",
      "affiliation": [
        {
          "name": "The Pennsylvania State University 1 Department of Physics, , University Park, Pennsylvania 16802, USA"
        }
      ]
    },
    {
      "given": "J.",
      "family": "Hoffman",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Yale University 2 Department of Applied Physics, , New Haven, Connecticut 06520, USA"
        }
      ]
    },
    {
      "given": "A.",
      "family": "Posadas",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Yale University 2 Department of Applied Physics, , New Haven, Connecticut 06520, USA"
        }
      ]
    },
    {
      "given": "K.",
      "family": "Zou",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "The Pennsylvania State University 1 Department of Physics, , University Park, Pennsylvania 16802, USA"
        }
      ]
    },
    {
      "given": "C. H.",
      "family": "Ahn",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Yale University 2 Department of Applied Physics, , New Haven, Connecticut 06520, USA"
        }
      ]
    },
    {
      "given": "J.",
      "family": "Zhu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "The Pennsylvania State University 1 Department of Physics, , University Park, Pennsylvania 16802, USA"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2010,
        7,
        23
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070301572627600_c1",
      "doi-asserted-by": "publisher",
      "first-page": "1530",
      "DOI": "10.1126/science.1158877",
      "volume": "324",
      "year": "2009",
      "journal-title": "Science"
    },
    {
      "key": "2023070301572627600_c2",
      "doi-asserted-by": "publisher",
      "first-page": "68",
      "DOI": "10.1109/LED.2009.2034876",
      "volume": "31",
      "year": "2010",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2023070301572627600_c3",
      "doi-asserted-by": "publisher",
      "first-page": "571",
      "DOI": "10.1038/nature06037",
      "volume": "448",
      "year": "2007",
      "journal-title": "Nature (London)"
    },
    {
      "key": "2023070301572627600_c4",
      "doi-asserted-by": "publisher",
      "first-page": "020402",
      "DOI": "10.1103/PhysRevB.77.020402",
      "volume": "77",
      "year": "2008",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070301572627600_c5",
      "doi-asserted-by": "publisher",
      "first-page": "4553",
      "DOI": "10.1063/1.1759069",
      "volume": "84",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070301572627600_c6",
      "doi-asserted-by": "publisher",
      "first-page": "132901",
      "DOI": "10.1063/1.2985815",
      "volume": "93",
      "year": "2008",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070301572627600_c7",
      "doi-asserted-by": "publisher",
      "first-page": "163505",
      "DOI": "10.1063/1.3119215",
      "volume": "94",
      "year": "2009",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070301572627600_c8",
      "doi-asserted-by": "publisher",
      "first-page": "136808",
      "DOI": "10.1103/PhysRevLett.102.136808",
      "volume": "102",
      "year": "2009",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023070301572627600_c9",
      "doi-asserted-by": "publisher",
      "first-page": "134415",
      "DOI": "10.1103/PhysRevB.68.134415",
      "volume": "68",
      "year": "2003",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070301572627600_c10",
      "unstructured": "See supplementary material at http://dx.doi.org/10.1063/1.3467450 for characterization details of the PZT films and resistance hysteresis observed on a 2-LG device."
    },
    {
      "key": "2023070301572627600_c11",
      "doi-asserted-by": "publisher",
      "first-page": "2034",
      "DOI": "10.1063/1.1358848",
      "volume": "78",
      "year": "2001",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070301572627600_c12",
      "doi-asserted-by": "publisher",
      "first-page": "127601",
      "DOI": "10.1103/PhysRevLett.96.127601",
      "volume": "96",
      "year": "2006",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023070301572627600_c13",
      "doi-asserted-by": "publisher",
      "first-page": "205426",
      "DOI": "10.1103/PhysRevB.63.205426",
      "volume": "63",
      "year": "2001",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070301572627600_c14",
      "doi-asserted-by": "publisher",
      "first-page": "755",
      "DOI": "10.1021/nl025577o",
      "volume": "2",
      "year": "2002",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023070301572627600_c15",
      "doi-asserted-by": "publisher",
      "first-page": "193",
      "DOI": "10.1021/nl0259232",
      "volume": "3",
      "year": "2003",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023070301572627600_c16",
      "doi-asserted-by": "publisher",
      "first-page": "12504",
      "DOI": "10.1021/jp074692q",
      "volume": "111",
      "year": "2007",
      "journal-title": "J. Phys. Chem. C"
    },
    {
      "key": "2023070301572627600_c17",
      "doi-asserted-by": "publisher",
      "first-page": "284",
      "DOI": "10.1109/TNANO.2004.842053",
      "volume": "4",
      "year": "2005",
      "journal-title": "IEEE Trans. Nanotechnol."
    },
    {
      "key": "2023070301572627600_c18",
      "doi-asserted-by": "publisher",
      "first-page": "125206",
      "DOI": "10.1088/0957-4484/18/12/125206",
      "volume": "18",
      "year": "2007",
      "journal-title": "Nanotechnology"
    },
    {
      "key": "2023070301572627600_c19",
      "doi-asserted-by": "publisher",
      "first-page": "2896",
      "DOI": "10.1063/1.1799241",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070301572627600_c20",
      "doi-asserted-by": "publisher",
      "first-page": "5093",
      "DOI": "10.1021/la960360t",
      "volume": "12",
      "year": "1996",
      "journal-title": "Langmuir"
    },
    {
      "key": "2023070301572627600_c21",
      "doi-asserted-by": "publisher",
      "first-page": "1",
      "DOI": "10.1016/S0167-5729(01)00020-6",
      "volume": "46",
      "year": "2002",
      "journal-title": "Surf. Sci. Rep."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3467450/14434862/033114_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3467450/14434862/033114_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        3
      ]
    ],
    "date-time": "2023-07-03T01:57:33Z",
    "timestamp": 1688349453000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/97/3/033114/339526/Unusual-resistance-hysteresis-in-n-layer-graphene"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2010,
        7,
        19
      ]
    ]
  },
  "references-count": 21,
  "journal-issue": {
    "issue": "3",
    "published-print": {
      "date-parts": [
        [
          2010,
          7,
          19
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.3467450",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2010,
        7,
        19
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2010,
        7,
        19
      ]
    ]
  },
  "article-number": "033114"
}