DOI: 10.1063/1.3463414. Room temperature imaging at 1.63 and 2.54 THz with field effect transistor detectors

Room temperature imaging at 1.63 and 2.54 THz with field effect transistor detectors

10.1063/1.3463414

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

GaAs nanometric field effect-transistors are used for room temperature single-pixel imaging using radiation frequencies above 1 THz. Images obtained in transmission mode at 1.63 THz are recorded using transistors operating in a photovoltaic mode with spatial resolution of 300 μm and voltage sensitivity of about 8 mV/W. A reduction in response with increasing frequency was observed and mitigated by the application of a source-drain current, leading to the demonstration of imaging at up to 2.54 THz.

Bibliography

Nadar, S., Videlier, H., Coquillat, D., Teppe, F., Sakowicz, M., Dyakonova, N., Knap, W., Seliuta, D., KaÅ¡alynas, I., & ValuÅ¡is, G. (2010). Room temperature imaging at 1.63 and 2.54 THz with field effect transistor detectors. Journal of Applied Physics, 108(5).

Authors 10

S. Nadar (first)
H. Videlier (additional)
D. Coquillat (additional)
F. Teppe (additional)
M. Sakowicz (additional)
N. Dyakonova (additional)
W. Knap (additional)
D. Seliuta (additional)
I. Kašalynas (additional)
G. Valušis (additional)

References 17 Referenced 35

10.1364/OL.20.001716 / Opt. Lett. (1995)
10.1038/417156a / Nature (London) (2002)
10.1063/1.1611642 / Appl. Phys. Lett. (2003)
10.1063/1.2919051 / Appl. Phys. Lett. (2008)
10.1063/1.1689401 / Appl. Phys. Lett. (2004)
10.1063/1.1525851 / Appl. Phys. Lett. (2002)
10.1109/LPT.2006.877220 / IEEE Photon. Technol. Lett. (2006)
10.1049/el.2009.0336 / Electron. Lett. (2009)
10.1103/PhysRevLett.71.2465 / Phys. Rev. Lett. (1993)
10.1109/16.536809 / IEEE Trans. Electron Devices (1996)
10.1103/PhysRevB.73.125328 / Phys. Rev. B (2006)
10.1049/el:20080172 / Electron. Lett. (2008)
10.1016/j.optcom.2009.04.054 / Opt. Commun. (2009)
{'key': '2023070320354411100_c14', 'first-page': '1319', 'volume': '30', 'year': '2009', 'journal-title': 'J. Infrared Milli. Terahz. Waves'} / J. Infrared Milli. Terahz. Waves (2009)
10.1088/0953-8984/20/38/384205 / J. Phys.: Condens. Matter (2008)
10.1063/1.2005394 / Appl. Phys. Lett. (2005)
10.1063/1.3140611 / J. Appl. Phys. (2009)

Dates

Type	When
Created	14 years, 11 months ago (Sept. 13, 2010, 6:16 p.m.)
Deposited	2 years, 2 months ago (July 3, 2023, 7:44 p.m.)
Indexed	17 hours, 52 minutes ago (Sept. 3, 2025, 7 a.m.)
Issued	15 years ago (Sept. 1, 2010)
Published	15 years ago (Sept. 1, 2010)
Published Online	14 years, 11 months ago (Sept. 13, 2010)
Published Print	15 years ago (Sept. 1, 2010)

Funders 0

None

BibTeX

@article{Nadar_2010, title={Room temperature imaging at 1.63 and 2.54 THz with field effect transistor detectors}, volume={108}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.3463414}, DOI={10.1063/1.3463414}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Nadar, S. and Videlier, H. and Coquillat, D. and Teppe, F. and Sakowicz, M. and Dyakonova, N. and Knap, W. and Seliuta, D. and Kašalynas, I. and Valušis, G.}, year={2010}, month=sep }

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