DOI: 10.1063/1.3460141. Different nonvolatile memory effects in epitaxial Pt/PbZr0.3Ti0.7O3/LSCO heterostructures

Different nonvolatile memory effects in epitaxial Pt/PbZr0.3Ti0.7O3/LSCO heterostructures

10.1063/1.3460141

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We found different nonvolatile memory effects between ferroelectric and resistive switching in Pt/PbZr0.3Ti0.7O3(PZT)/La0.5Sr0.5CoO3 (LSCO) heterostructures, depending on thickness of epitaxial PZT films. As the film thickness decreased below 34 nm, leakage and/or tunneling currents increased and hindered ferroelectric switching of films; alternatively, bipolar resistive switching was observed. Analysis using fitting plot on resistive switching behaviors suggested that variable Schottky barrier at the interface between Pt electrode and the film may be responsible for the different nonvolatile memory switching.

Bibliography

Choi, J., Kim, J.-S., Hwang, I., Hong, S., Byun, I.-S., Lee, S.-W., Kang, S.-O., & Park, B. H. (2010). Different nonvolatile memory effects in epitaxial Pt/PbZr0.3Ti0.7O3/LSCO heterostructures. Applied Physics Letters, 96(26).

Authors 8

Jinsik Choi (first)
Jin-Soo Kim (additional)
Inrok Hwang (additional)
Sahwan Hong (additional)
Ik-Su Byun (additional)
Seung-Woong Lee (additional)
Sung-Oong Kang (additional)
Bae Ho Park (additional)

References 12 Referenced 22

10.1126/science.276.5310.238 / Science (1997)
10.1063/1.1627944 / Appl. Phys. Lett. (2003)
10.1063/1.2162860 / Appl. Phys. Lett. (2006)
10.1038/nmat1614 / Nature Mater. (2006)
10.1063/1.2430912 / Appl. Phys. Lett. (2007)
10.1002/pssr.200701003 / Phys. Status Solidi (RRL) (2007)
10.1103/PhysRevLett.92.178302 / Phys. Rev. Lett. (2004)
10.1002/adma.200700251 / Adv. Mater. (Weinheim, Ger.) (2007)
10.1063/1.1845598 / Appl. Phys. Lett. (2004)
10.1063/1.2841917 / Appl. Phys. Lett. (2008)
10.1080/10584580500414226 / Integr. Ferroelectr. (2005)
10.1063/1.2234840 / Appl. Phys. Lett. (2006)

Dates

Type	When
Created	15 years, 1 month ago (July 2, 2010, 6:59 p.m.)
Deposited	2 years ago (Aug. 1, 2023, 12:58 a.m.)
Indexed	1 month ago (July 30, 2025, 6:54 a.m.)
Issued	15 years, 2 months ago (June 28, 2010)
Published	15 years, 2 months ago (June 28, 2010)
Published Online	15 years, 1 month ago (July 2, 2010)
Published Print	15 years, 2 months ago (June 28, 2010)

Funders 0

None

BibTeX

@article{Choi_2010, title={Different nonvolatile memory effects in epitaxial Pt/PbZr0.3Ti0.7O3/LSCO heterostructures}, volume={96}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3460141}, DOI={10.1063/1.3460141}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choi, Jinsik and Kim, Jin-Soo and Hwang, Inrok and Hong, Sahwan and Byun, Ik-Su and Lee, Seung-Woong and Kang, Sung-Oong and Park, Bae Ho}, year={2010}, month=jun }

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