DOI: 10.1063/1.3458707. Stress generation in silicon particles during lithium insertion

Stress generation in silicon particles during lithium insertion

10.1063/1.3458707

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Using a fully-coupled diffusion-elasticity model with Butler–Volmer surface kinetics, we simulate the insertion of lithium into spherical silicon particles. Simulations predict the evolution of concentration, displacements, and stresses in the particles during the first insertion of Li. The particle response depends strongly on the reaction kinetics and the resulting stresses can be above the tensile failure stress of silicon depending on the particle size and discharge rate.

Bibliography

Golmon, S., Maute, K., Lee, S.-H., & Dunn, M. L. (2010). Stress generation in silicon particles during lithium insertion. Applied Physics Letters, 97(3).

Authors 4

Stephanie Golmon (first)
Kurt Maute (additional)
Se-Hee Lee (additional)
Martin L. Dunn (additional)

References 26 Referenced 136

10.1149/1.1563094 / Electrochem. Solid-State Lett. (2003)
10.1016/j.jpowsour.2006.09.084 / J. Power Sources (2007)
10.1002/adfm.200701245 / Adv. Funct. Mater. (2008)
10.1038/nnano.2007.411 / Nat. Nanotechnol. (2008)
10.1149/1.2127495 / J. Electrochem. Soc. (1981)
10.1149/1.1390899 / Electrochem. Solid-State Lett. (1999)
10.1021/nl8036323 / Nano Lett. (2009)
10.1002/anie.200804355 / Angew. Chem., Int. Ed. (2008)
10.1007/s10008-006-0095-1 / J. Solid State Electrochem. (2006)
10.1149/1.2185287 / J. Electrochem. Soc. (2006)
10.1149/1.2759840 / J. Electrochem. Soc. (2007)
10.1149/1.2926617 / J. Electrochem. Soc. (2008)
10.1063/1.3000442 / J. Appl. Phys. (2008)
10.1016/j.jpowsour.2009.01.021 / J. Power Sources (2009)
10.1063/1.1539929 / Appl. Phys. Lett. (2003)
10.1038/nmat977 / Nature Mater. (2003)
10.1016/j.jmps.2004.03.009 / J. Mech. Phys. Solids (2004)
{'edition': '2nd ed.', 'volume-title': 'Electrochemical Methods', 'year': '2001', 'key': '2023070215022683900_c18'} / Electrochemical Methods (2001)
{'edition': '3rd ed.', 'volume-title': 'Electrochemical Systems', 'year': '2004', 'key': '2023070215022683900_c19'} / Electrochemical Systems (2004)
10.1149/1.1393279 / J. Electrochem. Soc. (2000)
10.1016/j.compstruc.2009.08.005 / Comput. Struc. (2009)
10.1016/j.ssi.2008.12.015 / Solid State Ionics (2009)
{'key': '2023070215022683900_c23'}
{'key': '2023070215022683900_c24', 'volume-title': 'CRC Handbook of Chemistry and Physics', 'author': 'Lide', 'year': '2000', 'edition': '81st ed.'} / CRC Handbook of Chemistry and Physics by Lide (2000)
10.1063/1.369711 / J. Appl. Phys. (1999)
10.1007/s10853-006-6567-y / J. Mater. Sci. (2006)

Dates

Type	When
Created	15 years, 1 month ago (July 21, 2010, 6:21 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 11:02 a.m.)
Indexed	19 hours, 33 minutes ago (Aug. 23, 2025, 1:06 a.m.)
Issued	15 years, 1 month ago (July 19, 2010)
Published	15 years, 1 month ago (July 19, 2010)
Published Online	15 years, 1 month ago (July 21, 2010)
Published Print	15 years, 1 month ago (July 19, 2010)

Funders 0

None

BibTeX

@article{Golmon_2010, title={Stress generation in silicon particles during lithium insertion}, volume={97}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3458707}, DOI={10.1063/1.3458707}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Golmon, Stephanie and Maute, Kurt and Lee, Se-Hee and Dunn, Martin L.}, year={2010}, month=jul }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        23
      ]
    ],
    "date-time": "2025-08-23T05:06:01Z",
    "timestamp": 1755925561459,
    "version": "3.41.2"
  },
  "reference-count": 26,
  "publisher": "AIP Publishing",
  "issue": "3",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2010,
        7,
        19
      ]
    ]
  },
  "abstract": "<jats:p>Using a fully-coupled diffusion-elasticity model with Butler\u2013Volmer surface kinetics, we simulate the insertion of lithium into spherical silicon particles. Simulations predict the evolution of concentration, displacements, and stresses in the particles during the first insertion of Li. The particle response depends strongly on the reaction kinetics and the resulting stresses can be above the tensile failure stress of silicon depending on the particle size and discharge rate.</jats:p>",
  "DOI": "10.1063/1.3458707",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2010,
        7,
        21
      ]
    ],
    "date-time": "2010-07-21T22:21:57Z",
    "timestamp": 1279750917000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 136,
  "title": "Stress generation in silicon particles during lithium insertion",
  "prefix": "10.1063",
  "volume": "97",
  "author": [
    {
      "given": "Stephanie",
      "family": "Golmon",
      "sequence": "first",
      "affiliation": [
        {
          "name": "University of Colorado 1 Department of Aerospace Engineering Sciences, , CB 429, Boulder, CO 80301\u20130429, USA"
        }
      ]
    },
    {
      "given": "Kurt",
      "family": "Maute",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Colorado 1 Department of Aerospace Engineering Sciences, , CB 429, Boulder, CO 80301\u20130429, USA"
        }
      ]
    },
    {
      "given": "Se-Hee",
      "family": "Lee",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Colorado at Boulder 2 Department of Mechanical Engineering, , USA"
        }
      ]
    },
    {
      "given": "Martin L.",
      "family": "Dunn",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Colorado at Boulder 2 Department of Mechanical Engineering, , USA"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2010,
        7,
        21
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070215022683900_c1",
      "doi-asserted-by": "publisher",
      "first-page": "A75",
      "DOI": "10.1149/1.1563094",
      "volume": "6",
      "year": "2003",
      "journal-title": "Electrochem. Solid-State Lett."
    },
    {
      "key": "2023070215022683900_c2",
      "doi-asserted-by": "publisher",
      "first-page": "1003",
      "DOI": "10.1016/j.jpowsour.2006.09.084",
      "volume": "163",
      "year": "2007",
      "journal-title": "J. Power Sources"
    },
    {
      "key": "2023070215022683900_c3",
      "doi-asserted-by": "publisher",
      "first-page": "1057",
      "DOI": "10.1002/adfm.200701245",
      "volume": "18",
      "year": "2008",
      "journal-title": "Adv. Funct. Mater."
    },
    {
      "key": "2023070215022683900_c4",
      "doi-asserted-by": "publisher",
      "first-page": "31",
      "DOI": "10.1038/nnano.2007.411",
      "volume": "3",
      "year": "2008",
      "journal-title": "Nat. Nanotechnol."
    },
    {
      "key": "2023070215022683900_c5",
      "doi-asserted-by": "publisher",
      "first-page": "725",
      "DOI": "10.1149/1.2127495",
      "volume": "128",
      "year": "1981",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023070215022683900_c6",
      "doi-asserted-by": "publisher",
      "first-page": "547",
      "DOI": "10.1149/1.1390899",
      "volume": "2",
      "year": "1999",
      "journal-title": "Electrochem. Solid-State Lett."
    },
    {
      "key": "2023070215022683900_c7",
      "doi-asserted-by": "publisher",
      "first-page": "491",
      "DOI": "10.1021/nl8036323",
      "volume": "9",
      "year": "2009",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023070215022683900_c8",
      "doi-asserted-by": "publisher",
      "first-page": "10151",
      "DOI": "10.1002/anie.200804355",
      "volume": "47",
      "year": "2008",
      "journal-title": "Angew. Chem., Int. Ed."
    },
    {
      "key": "2023070215022683900_c9",
      "doi-asserted-by": "publisher",
      "first-page": "293",
      "DOI": "10.1007/s10008-006-0095-1",
      "volume": "10",
      "year": "2006",
      "journal-title": "J. Solid State Electrochem."
    },
    {
      "key": "2023070215022683900_c10",
      "doi-asserted-by": "publisher",
      "first-page": "A1019",
      "DOI": "10.1149/1.2185287",
      "volume": "153",
      "year": "2006",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023070215022683900_c11",
      "doi-asserted-by": "publisher",
      "first-page": "A910",
      "DOI": "10.1149/1.2759840",
      "volume": "154",
      "year": "2007",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023070215022683900_c12",
      "doi-asserted-by": "publisher",
      "first-page": "542",
      "DOI": "10.1149/1.2926617",
      "volume": "155",
      "year": "2008",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023070215022683900_c13",
      "doi-asserted-by": "publisher",
      "first-page": "083521",
      "DOI": "10.1063/1.3000442",
      "volume": "104",
      "year": "2008",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070215022683900_c14",
      "doi-asserted-by": "publisher",
      "first-page": "453",
      "DOI": "10.1016/j.jpowsour.2009.01.021",
      "volume": "190",
      "year": "2009",
      "journal-title": "J. Power Sources"
    },
    {
      "key": "2023070215022683900_c15",
      "doi-asserted-by": "publisher",
      "first-page": "535",
      "DOI": "10.1063/1.1539929",
      "volume": "82",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070215022683900_c16",
      "doi-asserted-by": "publisher",
      "first-page": "656",
      "DOI": "10.1038/nmat977",
      "volume": "2",
      "year": "2003",
      "journal-title": "Nature Mater."
    },
    {
      "key": "2023070215022683900_c17",
      "doi-asserted-by": "publisher",
      "first-page": "1935",
      "DOI": "10.1016/j.jmps.2004.03.009",
      "volume": "52",
      "year": "2004",
      "journal-title": "J. Mech. Phys. Solids"
    },
    {
      "edition": "2nd ed.",
      "volume-title": "Electrochemical Methods",
      "year": "2001",
      "key": "2023070215022683900_c18"
    },
    {
      "edition": "3rd ed.",
      "volume-title": "Electrochemical Systems",
      "year": "2004",
      "key": "2023070215022683900_c19"
    },
    {
      "key": "2023070215022683900_c20",
      "doi-asserted-by": "publisher",
      "first-page": "831",
      "DOI": "10.1149/1.1393279",
      "volume": "147",
      "year": "2000",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023070215022683900_c21",
      "doi-asserted-by": "publisher",
      "first-page": "1567",
      "DOI": "10.1016/j.compstruc.2009.08.005",
      "volume": "87",
      "year": "2009",
      "journal-title": "Comput. Struc."
    },
    {
      "key": "2023070215022683900_c22",
      "doi-asserted-by": "publisher",
      "first-page": "222",
      "DOI": "10.1016/j.ssi.2008.12.015",
      "volume": "180",
      "year": "2009",
      "journal-title": "Solid State Ionics"
    },
    {
      "key": "2023070215022683900_c23"
    },
    {
      "key": "2023070215022683900_c24",
      "volume-title": "CRC Handbook of Chemistry and Physics",
      "author": "Lide",
      "year": "2000",
      "edition": "81st ed."
    },
    {
      "key": "2023070215022683900_c25",
      "doi-asserted-by": "publisher",
      "first-page": "3519",
      "DOI": "10.1063/1.369711",
      "volume": "85",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070215022683900_c26",
      "doi-asserted-by": "publisher",
      "first-page": "841",
      "DOI": "10.1007/s10853-006-6567-y",
      "volume": "41",
      "year": "2006",
      "journal-title": "J. Mater. Sci."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3458707/14435229/033111_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3458707/14435229/033111_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        2
      ]
    ],
    "date-time": "2023-07-02T15:02:36Z",
    "timestamp": 1688310156000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/97/3/033111/339982/Stress-generation-in-silicon-particles-during"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2010,
        7,
        19
      ]
    ]
  },
  "references-count": 26,
  "journal-issue": {
    "issue": "3",
    "published-print": {
      "date-parts": [
        [
          2010,
          7,
          19
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.3458707",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2010,
        7,
        19
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2010,
        7,
        19
      ]
    ]
  },
  "article-number": "033111"
}