DOI: 10.1063/1.3452331. Investigation of state retention in metal–ferroelectric–insulator–semiconductor structures based on Langmuir

Investigation of state retention in metal–ferroelectric–insulator–semiconductor structures based on Langmuir–Blodgett copolymer films

10.1063/1.3452331

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Among the ferroelectric thin films considered for use in nonvolatile memory devices, the ferroelectric copolymer of polyvinylidene fluoride, PVDF (C2H2F2), with trifluoroethylene, TrFE (C2HF3), has distinct advantages, including low dielectric constant, low processing temperature, relative low cost compared with epitaxial ferroelectric oxides, and compatibility with organic semiconductors. We report the operation and polarization retention properties of a metal–ferroelectric–insulator–semiconductor bistable capacitor memory element consisting of an aluminum gate, a P(VDF-TrFE) Langmuir–Blodgett film, a 30 nm cerium oxide buffer layer, and a moderately doped silicon wafer. The device exhibited a 1.9 V wide hysteresis window obtained with a ±7 V operating range with a state retention time of 10 min. The mechanisms contributing to loss of state retention are discussed.

Bibliography

Reece, T. J., Gerber, A., Kohlstedt, H., & Ducharme, S. (2010). Investigation of state retention in metalâferroelectricâinsulatorâsemiconductor structures based on LangmuirâBlodgett copolymer films. Journal of Applied Physics, 108(2).

Authors 4

Timothy J. Reece (first)
A. Gerber (additional)
H. Kohlstedt (additional)
Stephen Ducharme (additional)

References 41 Referenced 13

10.1063/1.2014935 / J. Appl. Phys. (2005)
10.1109/T-ED.1971.17309 / IEEE Trans. Electron Devices (1971)
10.1080/10584589708221681 / Integr. Ferroelectr. (1997)
I. M. Ross, “Semiconductor translating device,” U.S. Patent No. 2791760 (7 May 1957).
10.1109/T-ED.1963.15245 / IEEE Trans. Electron Devices (1963)
10.1063/1.322014 / J. Appl. Phys. (1975)
10.1007/s00339-004-2564-7 / Appl. Phys. A: Mater. Sci. Process. (2005)
10.1063/1.1351535 / Appl. Phys. Lett. (2001)
10.1063/1.1459115 / Appl. Phys. Lett. (2002)
10.1063/1.2177549 / Appl. Phys. Lett. (2006)
10.1063/1.124771 / Appl. Phys. Lett. (1999)
10.1080/01411598908206863 / Phase Transitions (1989)
{'first-page': '895', 'volume-title': 'Ferroelectric Polymers', 'year': '1995', 'key': '2023080301572009000_c13'} / Ferroelectric Polymers (1995)
10.1109/TDEI.2006.247840 / IEEE Trans. Dielectr. Electr. Insul. (2006)
{'volume-title': 'The Applications of Ferroelectric Polymers', 'year': '1988', 'key': '2023080301572009000_c15'} / The Applications of Ferroelectric Polymers (1988)
10.1143/JJAP.25.590 / Jpn. J. Appl. Phys., Part 1 (1986)
10.1063/1.1785836 / J. Appl. Phys. (2004)
10.1109/LED.2004.841186 / IEEE Electron Device Lett. (2005)
10.1038/nmat1329 / Nature Mater. (2005)
10.1063/1.1946190 / Appl. Phys. Lett. (2005)
10.1063/1.2713856 / Appl. Phys. Lett. (2007)
10.1038/nmat2207 / Nature Mater. (2008)
10.1038/36069 / Nature (London) (1998)
{'key': '2023080301572009000_c24', 'first-page': '545', 'volume-title': 'Ferroelectric and Dielectric Thin Films', 'author': 'Nalwa', 'year': '2002'} / Ferroelectric and Dielectric Thin Films by Nalwa (2002)
{'first-page': '35', 'volume-title': 'Proceedings of the Eleventh IEEE International Symposium on Applications of Ferroelectrics', 'year': '1998', 'key': '2023080301572009000_c25'} / Proceedings of the Eleventh IEEE International Symposium on Applications of Ferroelectrics (1998)
10.1007/s00339-004-3021-3 / Appl. Phys. A: Mater. Sci. Process. (2005)
10.1109/LED.2002.1015207 / IEEE Electron Device Lett. (2002)
{'volume-title': 'Principles and Applications of Ferroelectrics and Related Materials', 'year': '1977', 'key': '2023080301572009000_c28'} / Principles and Applications of Ferroelectrics and Related Materials (1977)
10.1016/0038-1098(72)91180-5 / Solid State Commun. (1972)
10.1143/JJAP.40.2923 / Jpn. J. Appl. Phys., Part 1 (2001)
10.1103/PhysRevB.61.5760 / Phys. Rev. B (2000)
10.1088/0268-1242/15/2/308 / Semicond. Sci. Technol. (2000)
10.1063/1.1533844 / Appl. Phys. Lett. (2003)
{'volume-title': 'Physics of Semiconductor Devices', 'year': '1981', 'key': '2023080301572009000_c34'} / Physics of Semiconductor Devices (1981)
10.1063/1.1649464 / J. Appl. Phys. (2004)
10.1063/1.351910 / J. Appl. Phys. (1992)
{'year': '2003', 'key': '2023080301572009000_c37'} (2003)
10.1080/10584580601085784 / Integr. Ferroelectr. (2006)
10.1103/PhysRevLett.84.175 / Phys. Rev. Lett. (2000)
10.1063/1.2006228 / J. Appl. Phys. (2005)
10.1063/1.2817646 / J. Appl. Phys. (2007)

Dates

Type	When
Created	15 years, 1 month ago (July 22, 2010, 6:33 p.m.)
Deposited	2 years ago (Aug. 2, 2023, 9:57 p.m.)
Indexed	4 weeks, 1 day ago (July 30, 2025, 6:54 a.m.)
Issued	15 years, 1 month ago (July 15, 2010)
Published	15 years, 1 month ago (July 15, 2010)
Published Online	15 years, 1 month ago (July 22, 2010)
Published Print	15 years, 1 month ago (July 15, 2010)

Funders 0

None

BibTeX

@article{Reece_2010, title={Investigation of state retention in metal–ferroelectric–insulator–semiconductor structures based on Langmuir–Blodgett copolymer films}, volume={108}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.3452331}, DOI={10.1063/1.3452331}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Reece, Timothy J. and Gerber, A. and Kohlstedt, H. and Ducharme, Stephen}, year={2010}, month=jul }

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