Abstract
We have synthesized epitaxial NdNiO3 ultrathin films in a layer-by-layer growth mode under tensile and compressive strain on SrTiO3 (001) and LaAlO3 (001), respectively. A combination of x-ray diffraction, temperature dependent resistivity, and soft x-ray absorption spectroscopy has been applied to elucidate electronic and structural properties of the samples. In contrast to the bulk NdNiO3, the metal-insulator transition under compressive strain is found to be completely quenched, while the transition remains under the tensile strain albeit modified from the bulk behavior.
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Dates
Type | When |
---|---|
Created | 15 years, 2 months ago (June 9, 2010, 6:11 p.m.) |
Deposited | 2 years, 1 month ago (July 31, 2023, 5:04 a.m.) |
Indexed | 2 weeks ago (Aug. 21, 2025, 12:26 p.m.) |
Issued | 15 years, 2 months ago (June 7, 2010) |
Published | 15 years, 2 months ago (June 7, 2010) |
Published Online | 15 years, 2 months ago (June 9, 2010) |
Published Print | 15 years, 2 months ago (June 7, 2010) |
@article{Liu_2010, title={Strain-mediated metal-insulator transition in epitaxial ultrathin films of NdNiO3}, volume={96}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3451462}, DOI={10.1063/1.3451462}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Liu, Jian and Kareev, M. and Gray, B. and Kim, J. W. and Ryan, P. and Dabrowski, B. and Freeland, J. W. and Chakhalian, J.}, year={2010}, month=jun }