DOI: 10.1063/1.344986. Pt/Ti/<i>n</i>-InP nonalloyed ohmic contacts formed by rapid thermal processing

Pt/Ti/n-InP nonalloyed ohmic contacts formed by rapid thermal processing

10.1063/1.344986

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Low resistance nonalloyed ohmic contacts of e-gun evaporated Pt/Ti to S doped n-InP 5×1017, 1×1018, and 5×1018 cm−3 have been fabricated by rapid thermal processing. The contacts to the lower doped substrates (5×1017 and 1×1018 cm−3) were rectifying as-deposited as well as after heat treatment at temperatures lower than 350 °C. Higher processing temperatures stimulated the Schottky to ohmic contact conversion with minimum specific contact resistance of 1.5×10−5 and 5×10−6 Ω cm2, respectively, as a result of rapid thermal processing at 450 °C for 30 s. Heating at a temperature of 550 °C again yielded a Schottky contact. The contact to the 5×1018 cm−3 InP was ohmic as deposited with a specific contact resistance value of 1.1×10−4 Ω cm2. Supplying heat treatment to the contact caused a decrease of the specific contact resistance to a minimum of 8×10−7 Ω cm2 as a result of rapid thermal processing at 450 °C for 30 s. In all cases, this heat treatment caused a limited interfacial reactions between the Ti and the InP, and resulted in an almost abrupt interface. Heating at temperatures higher than 500 °C resulted in an interfacial intermixing and a mutual migration and reaction of the Ti and the semiconductor elements. The Pt/Ti bilayer structure was highly tensile as deposited (5×109 dyn cm−2) and became stress-free as a result of the interfacial reactions which took place while heating the samples to temperature of 400 °C or higher.

Bibliography

Katz, A., Weir, B. E., Chu, S. N. G., Thomas, P. M., Soler, M., Boone, T., & Dautremont-Smith, W. C. (1990). Pt/Ti/n-InP nonalloyed ohmic contacts formed by rapid thermal processing. Journal of Applied Physics, 67(8), 3872â3875.

Authors 7

A. Katz (first)
B. E. Weir (additional)
S. N. G. Chu (additional)
P. M. Thomas (additional)
M. Soler (additional)
T. Boone (additional)
W. C. Dautremont-Smith (additional)

References 14 Referenced 26

10.1016/0040-6090(79)90325-0 / Thin Solid Films (1979)
10.1016/0038-1101(81)90214-8 / Solid-State Electron. (1981)
10.1149/1.2123615 / J. Electrochem. Soc. (1982)
{'key': '2024020411002005200_r4', 'first-page': '293', 'volume': '56', 'year': '1981', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1981)
10.1007/BF02653363 / J. Electronic Mater. (1987)
10.1063/1.344295 / J. Appl. Phys. (1989)
10.1063/1.343291 / J. Appl. Phys. (1989)
10.1063/1.101110 / Appl. Phys. Lett. (1989)
{'key': '2024020411002005200_r9', 'first-page': '1424', 'volume': '6', 'year': '1989', 'journal-title': 'J. Lightwave Technol.'} / J. Lightwave Technol. (1989)
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{'key': '2024020411002005200_r11', 'first-page': '111', 'volume': '5', 'year': '1982', 'journal-title': 'IEEE Electron. Devices Lett.'} / IEEE Electron. Devices Lett. (1982)
{'key': '2024020411002005200_r12'}
10.1016/0168-583X(85)90762-1 / Nucl. Instrum. Methods B (1985)
{'key': '2024020411002005200_r14'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:07 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 6 a.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, 10:28 a.m.)
Issued	35 years, 4 months ago (April 15, 1990)
Published	35 years, 4 months ago (April 15, 1990)
Published Print	35 years, 4 months ago (April 15, 1990)

Funders 0

None

BibTeX

@article{Katz_1990, title={Pt/Ti/n-InP nonalloyed ohmic contacts formed by rapid thermal processing}, volume={67}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.344986}, DOI={10.1063/1.344986}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Katz, A. and Weir, B. E. and Chu, S. N. G. and Thomas, P. M. and Soler, M. and Boone, T. and Dautremont-Smith, W. C.}, year={1990}, month=apr, pages={3872–3875} }

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