Abstract
We present a systematic study of the optical contrast of niobium diselenide and molybdenum disulfide flakes deposited onto silicon wafers with a thermally grown silicon oxide layer. We measure the optical contrast of flakes whose thickness, which is obtained by atomic force microscopy, ranges from 200 layers down to a monolayer using different illumination wavelengths in the visible spectrum. The refractive index of these thin crystals has been obtained from the optical contrast using Fresnel law. In this way the optical microscopy data can be quantitatively analyzed to determine the thickness of the flakes in a fast and nondestructive way.
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See supplementary material at http://dx.doi.org/10.1063/1.3442495 for more information about the technique.
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Dates
Type | When |
---|---|
Created | 15 years, 2 months ago (June 1, 2010, 8:09 a.m.) |
Deposited | 2 years, 1 month ago (July 2, 2023, 7:33 p.m.) |
Indexed | 2 weeks, 1 day ago (Aug. 6, 2025, 8:24 a.m.) |
Issued | 15 years, 2 months ago (May 24, 2010) |
Published | 15 years, 2 months ago (May 24, 2010) |
Published Online | 15 years, 2 months ago (May 28, 2010) |
Published Print | 15 years, 2 months ago (May 24, 2010) |
@article{Castellanos_Gomez_2010, title={Optical identification of atomically thin dichalcogenide crystals}, volume={96}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3442495}, DOI={10.1063/1.3442495}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Castellanos-Gomez, A and Agraït, N and Rubio-Bollinger, G}, year={2010}, month=may }