DOI: 10.1063/1.344183. Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfaces

Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfaces

10.1063/1.344183

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The formation, interaction, and propagation of misfit dislocations in molecular-beam epitaxial InGaAs/GaAs heterointerfaces have been studied by transmission electron microscopy. With the lattice mismatch less than 2%, most of the interfacial dislocations are found to be 60° mixed dislocations introduced by glide processes. Sessile edge-type dislocations can also originate from the combination of two 60° mixed dislocations. The ratio of densities of edge dislocations to 60° dislocations was increased during the later part of the elastic strain relaxation. These sessile edge dislocations may be generated in appreciable numbers through a climb process. For large lattice-mismatched systems, the majority of the misfit dislocations are pure edge dislocations and high threading dislocation density is generally found. The interfacial dislocation network is found to contain regions of dislocations with the same Burgers vector that extend over several micrometers. The results support a mechanism that involves misfit dislocation multiplication during the molecular-beam epitaxial growth process.

Bibliography

Chang, K. H., Bhattacharya, P. K., & Gibala, R. (1989). Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfaces. Journal of Applied Physics, 66(7), 2993â2998.

Authors 3

Kevin H. Chang (first)
Pallab K. Bhattacharya (additional)
Ronald Gibala (additional)

References 33 Referenced 117

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{'key': '2024020410131325700_r2', 'first-page': '383', 'volume': '1', 'year': '1983', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1983)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:58 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 5:13 a.m.)
Indexed	1 year, 2 months ago (June 28, 2024, 6:54 p.m.)
Issued	35 years, 11 months ago (Oct. 1, 1989)
Published	35 years, 11 months ago (Oct. 1, 1989)
Published Print	35 years, 11 months ago (Oct. 1, 1989)

Funders 0

None

BibTeX

@article{Chang_1989, title={Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfaces}, volume={66}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.344183}, DOI={10.1063/1.344183}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Chang, Kevin H. and Bhattacharya, Pallab K. and Gibala, Ronald}, year={1989}, month=oct, pages={2993–2998} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        6,
        28
      ]
    ],
    "date-time": "2024-06-28T22:54:46Z",
    "timestamp": 1719615286700
  },
  "reference-count": 33,
  "publisher": "AIP Publishing",
  "issue": "7",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1989,
        10,
        1
      ]
    ]
  },
  "abstract": "<jats:p>The formation, interaction, and propagation of misfit dislocations in molecular-beam epitaxial InGaAs/GaAs heterointerfaces have been studied by transmission electron microscopy. With the lattice mismatch less than 2%, most of the interfacial dislocations are found to be 60\u00b0 mixed dislocations introduced by glide processes. Sessile edge-type dislocations can also originate from the combination of two 60\u00b0 mixed dislocations. The ratio of densities of edge dislocations to 60\u00b0 dislocations was increased during the later part of the elastic strain relaxation. These sessile edge dislocations may be generated in appreciable numbers through a climb process. For large lattice-mismatched systems, the majority of the misfit dislocations are pure edge dislocations and high threading dislocation density is generally found. The interfacial dislocation network is found to contain regions of dislocations with the same Burgers vector that extend over several micrometers. The results support a mechanism that involves misfit dislocation multiplication during the molecular-beam epitaxial growth process.</jats:p>",
  "DOI": "10.1063/1.344183",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:58:05Z",
    "timestamp": 1027688285000
  },
  "page": "2993-2998",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 117,
  "title": "Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfaces",
  "prefix": "10.1063",
  "volume": "66",
  "author": [
    {
      "given": "Kevin H.",
      "family": "Chang",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109"
        }
      ]
    },
    {
      "given": "Pallab K.",
      "family": "Bhattacharya",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109"
        }
      ]
    },
    {
      "given": "Ronald",
      "family": "Gibala",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020410131325700_r1",
      "doi-asserted-by": "crossref",
      "first-page": "379",
      "DOI": "10.1116/1.582561",
      "volume": "1",
      "year": "1983",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020410131325700_r2",
      "first-page": "383",
      "volume": "1",
      "year": "1983",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020410131325700_r3",
      "first-page": "118",
      "volume": "27",
      "year": "1974",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020410131325700_r4",
      "doi-asserted-by": "crossref",
      "first-page": "117",
      "DOI": "10.1063/1.1729050",
      "volume": "34",
      "year": "1963",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020410131325700_r4a",
      "doi-asserted-by": "crossref",
      "first-page": "123",
      "DOI": "10.1063/1.1729051",
      "volume": "34",
      "year": "1963",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020410131325700_r5",
      "doi-asserted-by": "crossref",
      "first-page": "95",
      "DOI": "10.1002/pssb.19670190110",
      "volume": "19",
      "year": "1967",
      "journal-title": "Phys. Status Solidi"
    },
    {
      "key": "2024020410131325700_r6",
      "doi-asserted-by": "crossref",
      "first-page": "223",
      "DOI": "10.1007/BF00549922",
      "volume": "4",
      "year": "1969",
      "journal-title": "J. Mater. Sci."
    },
    {
      "key": "2024020410131325700_r7",
      "doi-asserted-by": "crossref",
      "first-page": "379",
      "DOI": "10.1002/pssa.2210920206",
      "volume": "92",
      "year": "1985",
      "journal-title": "Phys. Status Solidi A"
    },
    {
      "key": "2024020410131325700_r8",
      "doi-asserted-by": "crossref",
      "first-page": "2455",
      "DOI": "10.1103/PhysRevLett.59.2455",
      "volume": "59",
      "year": "1987",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020410131325700_r9",
      "doi-asserted-by": "crossref",
      "first-page": "1605",
      "DOI": "10.1063/1.99055",
      "volume": "52",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020410131325700_r10",
      "doi-asserted-by": "crossref",
      "first-page": "1207",
      "DOI": "10.1080/14786436608213536",
      "volume": "13",
      "year": "1966",
      "journal-title": "Philos. Mag."
    },
    {
      "key": "2024020410131325700_r11",
      "doi-asserted-by": "crossref",
      "first-page": "3800",
      "DOI": "10.1063/1.1659510",
      "volume": "41",
      "year": "1970",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020410131325700_r12",
      "doi-asserted-by": "crossref",
      "first-page": "126",
      "DOI": "10.1116/1.568741",
      "volume": "12",
      "year": "1975",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "key": "2024020410131325700_r13",
      "doi-asserted-by": "crossref",
      "first-page": "407",
      "DOI": "10.1016/0022-0248(78)90470-0",
      "volume": "45",
      "year": "1978",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020410131325700_r14",
      "doi-asserted-by": "crossref",
      "first-page": "425",
      "DOI": "10.1002/pssa.2210320210",
      "volume": "32",
      "year": "1975",
      "journal-title": "Phys. Status Solidi A"
    },
    {
      "key": "2024020410131325700_r15",
      "doi-asserted-by": "crossref",
      "first-page": "117",
      "DOI": "10.1016/0040-6090(77)90085-2",
      "volume": "42",
      "year": "1977",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020410131325700_r16",
      "doi-asserted-by": "crossref",
      "first-page": "699",
      "DOI": "10.1007/BF00548160",
      "volume": "12",
      "year": "1977",
      "journal-title": "J. Mater. Sci."
    },
    {
      "key": "2024020410131325700_r17",
      "doi-asserted-by": "crossref",
      "first-page": "394",
      "DOI": "10.1063/1.99889",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020410131325700_r18",
      "doi-asserted-by": "crossref",
      "first-page": "185",
      "DOI": "10.1063/1.1654336",
      "volume": "21",
      "year": "1972",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020410131325700_r19",
      "doi-asserted-by": "crossref",
      "first-page": "67",
      "DOI": "10.1007/BF00935905",
      "volume": "18",
      "year": "1979",
      "journal-title": "Appl. Phys."
    },
    {
      "key": "2024020410131325700_r20",
      "doi-asserted-by": "crossref",
      "first-page": "2473",
      "DOI": "10.1063/1.341656",
      "volume": "64",
      "year": "1988",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020410131325700_r21"
    },
    {
      "key": "2024020410131325700_r22",
      "doi-asserted-by": "crossref",
      "first-page": "1593",
      "DOI": "10.1143/JJAP.27.1593",
      "volume": "27",
      "year": "1988",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020410131325700_r23",
      "doi-asserted-by": "crossref",
      "first-page": "684",
      "DOI": "10.1063/1.99850",
      "volume": "53",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020410131325700_r24"
    },
    {
      "key": "2024020410131325700_r25"
    },
    {
      "key": "2024020410131325700_r26",
      "doi-asserted-by": "crossref",
      "first-page": "1710",
      "DOI": "10.1063/1.339597",
      "volume": "62",
      "year": "1987",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020410131325700_r27",
      "doi-asserted-by": "crossref",
      "first-page": "85",
      "DOI": "10.1007/BF00885035",
      "volume": "17",
      "year": "1978",
      "journal-title": "Appl. Phys."
    },
    {
      "key": "2024020410131325700_r28",
      "doi-asserted-by": "crossref",
      "first-page": "253",
      "DOI": "10.1016/0040-6090(76)90085-7",
      "volume": "33",
      "year": "1976",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020410131325700_r29"
    },
    {
      "key": "2024020410131325700_r30",
      "doi-asserted-by": "crossref",
      "first-page": "4259",
      "DOI": "10.1063/1.321409",
      "volume": "46",
      "year": "1975",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020410131325700_r31",
      "doi-asserted-by": "crossref",
      "first-page": "1004",
      "DOI": "10.1063/1.100780",
      "volume": "54",
      "year": "1989",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020410131325700_r32",
      "doi-asserted-by": "crossref",
      "first-page": "3391",
      "DOI": "10.1063/1.342654",
      "volume": "65",
      "year": "1989",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/66/7/2993/18628242/2993_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/66/7/2993/18628242/2993_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T10:13:32Z",
    "timestamp": 1707041612000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/66/7/2993/18390/Characteristics-of-dislocations-at-strained"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1989,
        10,
        1
      ]
    ]
  },
  "references-count": 33,
  "journal-issue": {
    "issue": "7",
    "published-print": {
      "date-parts": [
        [
          1989,
          10,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.344183",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1989,
        10,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1989,
        10,
        1
      ]
    ]
  }
}