DOI: 10.1063/1.3441263. Surface transfer hole doping of epitaxial graphene using MoO3 thin film

Surface transfer hole doping of epitaxial graphene using MoO3 thin film

10.1063/1.3441263

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Synchrotron-based in situ photoelectron spectroscopy investigations demonstrate effective surface transfer p-type doping of epitaxial graphene (EG) thermally grown on 4H–SiC(0001) via the deposition of MoO3 thin film on top. The large work function difference between EG and MoO3 facilitates electron transfer from EG to the MoO3 thin film. This leads to hole accumulation in the EG layer with an areal hole density of about 1.0×1013 cm−2, and places the Fermi level 0.38 eV below the graphene Dirac point.

Bibliography

Chen, Z., Santoso, I., Wang, R., Xie, L. F., Mao, H. Y., Huang, H., Wang, Y. Z., Gao, X. Y., Chen, Z. K., Ma, D., Wee, A. T. S., & Chen, W. (2010). Surface transfer hole doping of epitaxial graphene using MoO3 thin film. Applied Physics Letters, 96(21).

Authors 12

Zhenyu Chen (first)
Iman Santoso (additional)
Rui Wang (additional)
Lan Fei Xie (additional)
Hong Ying Mao (additional)
Han Huang (additional)
Yu Zhan Wang (additional)
Xing Yu Gao (additional)
Zhi Kuan Chen (additional)
Dongge Ma (additional)
Andrew Thye Shen Wee (additional)
Wei Chen (additional)

References 21 Referenced 134

10.1126/science.1158877 / Science (2009)
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10.1103/PhysRevB.77.115416 / Phys. Rev. B (2008)
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Dates

Type	When
Created	15 years, 3 months ago (May 25, 2010, 8 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 7:25 p.m.)
Indexed	4 hours, 59 minutes ago (Aug. 28, 2025, 8:38 a.m.)
Issued	15 years, 3 months ago (May 24, 2010)
Published	15 years, 3 months ago (May 24, 2010)
Published Online	15 years, 3 months ago (May 25, 2010)
Published Print	15 years, 3 months ago (May 24, 2010)

Funders 0

None

BibTeX

@article{Chen_2010, title={Surface transfer hole doping of epitaxial graphene using MoO3 thin film}, volume={96}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3441263}, DOI={10.1063/1.3441263}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chen, Zhenyu and Santoso, Iman and Wang, Rui and Xie, Lan Fei and Mao, Hong Ying and Huang, Han and Wang, Yu Zhan and Gao, Xing Yu and Chen, Zhi Kuan and Ma, Dongge and Wee, Andrew Thye Shen and Chen, Wei}, year={2010}, month=may }

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