Abstract
Electron-irradiation-induced defects in epitaxially grown 3C-SiC crystals have been studied by electron-spin-resonance (ESR) measurements. The results indicate the presence of an isotropic ESR center that consists of five lines equally spaced at about 1.5 G and has a g value of 2.0029±0.0001. Isochronal and isothermal annealing of electron-irradiated 3C-SiC showed that this center was annealed at three stages (150, 350, and 750 °C) and that the 750 °C stage exhibited first-order reaction with an activation energy of 2.2±0.3 eV.
References
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 8:58 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 4, 2024, 5:21 a.m.) |
Indexed | 11 months, 2 weeks ago (Sept. 4, 2024, 4:56 p.m.) |
Issued | 35 years, 9 months ago (Nov. 1, 1989) |
Published | 35 years, 9 months ago (Nov. 1, 1989) |
Published Print | 35 years, 9 months ago (Nov. 1, 1989) |
@article{Itoh_1989, title={Electron spin resonance in electron-irradiated 3C-SiC}, volume={66}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.343920}, DOI={10.1063/1.343920}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Itoh, Hisayoshi and Hayakawa, Naohiro and Nashiyama, Isamu and Sakuma, Eiichiro}, year={1989}, month=nov, pages={4529–4531} }