Abstract
A new inspection system using laser scattering was developed to characterize bulk microdefects in intrinsic gettering processed Si wafers. The density profiles of bulk microdefects and the width of the denuded zone in Si wafers were measured by this system without any etching treatment. The minimum size observed, as a particle, was estimated at several tens of nm in diameter by comparing a scattering image with a transmission electron microscope observation. From an analysis of the scattering intensity, differences of up to 10% in diameter were recognizable.
References
32
Referenced
29
10.1063/1.89340
/ Appl. Phys. Lett. (1977)10.1063/1.88825
/ Appl. Phys. Lett. (1976)10.1063/1.89831
/ Appl. Phys. Lett. (1978)10.1063/1.89908
/ Appl. Phys. Lett. (1978)10.1063/1.91421
/ Appl. Phys. Lett. (1980)10.1063/1.91421
/ Appl. Phys. Lett. (1980)10.1063/1.89831
/ Appl. Phys. Lett. (1978)10.1143/JJAP.19.L466
/ Jpn. J. Appl. Phys. (1980){'key': '2024020410154166800_r5', 'first-page': '580', 'volume': '112', 'year': '1977', 'journal-title': 'J. Electrochem. Soc.'}
/ J. Electrochem. Soc. (1977)10.1016/0022-0248(77)90282-2
/ J. Cryst. Growth (1977)10.1063/1.1714527
/ Appl. Phys. (1965){'key': '2024020410154166800_r6a', 'first-page': '1090', 'volume': '12', 'year': '1974', 'journal-title': 'J. Electrochem. Soc.'}
/ J. Electrochem. Soc. (1974){'key': '2024020410154166800_r6b'}
{'key': '2024020410154166800_r7', 'first-page': '752', 'volume': '124', 'year': '1977', 'journal-title': 'J. Electrochem. Soc.'}
/ J. Electrochem. Soc. (1977)10.1063/1.89174
/ Appl. Phys. Lett. (1976){'key': '2024020410154166800_r7b'}
{'key': '2024020410154166800_r8', 'first-page': '529', 'volume': '52', 'year': '1961', 'journal-title': 'Z. Metallkd.'}
/ Z. Metallkd. (1961)10.1063/1.1722229
/ J. Appl. Phys. (1956)10.1149/1.2404374
/ J. Electrochem. Soc. (1972)10.1149/1.2133401
/ J. Electrochem. Soc. (1977)10.1143/JJAP.22.L207
/ Jpn. J. Appl. Phys. (1983){'key': '2024020410154166800_r10'}
10.1016/0022-0248(89)90617-9
/ J. Cryst. Growth (1989)10.1103/PhysRev.105.1751
/ Phys. Rev. (1957)10.1149/1.2428706
/ J. Electrochem. Soc. (1958)10.1143/JJAP.15.651
/ Jpn. J. Appl. Phys. (1976){'key': '2024020410154166800_r15', 'first-page': '191', 'volume': '41', 'year': '1980', 'journal-title': 'Philos. Mag. A'}
/ Philos. Mag. A (1980)10.1080/01418618108235796
/ Philos. Mag. A (1981)10.1016/0030-4018(74)90327-7
/ Opt. Commun. (1974)10.1364/JOSA.66.001145
/ J. Opt. Soc. Am. (1976){'key': '2024020410154166800_r18'}
10.1103/PhysRev.108.268
/ Phys. Rev. (1957)
Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:02 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 4, 2024, 5:15 a.m.) |
Indexed | 4 months, 3 weeks ago (April 12, 2025, 1:07 a.m.) |
Issued | 35 years, 9 months ago (Dec. 1, 1989) |
Published | 35 years, 9 months ago (Dec. 1, 1989) |
Published Print | 35 years, 9 months ago (Dec. 1, 1989) |
@article{Moriya_1989, title={Development of a bulk microdefect analyzer for Si wafers}, volume={66}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.343715}, DOI={10.1063/1.343715}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Moriya, Kazuo and Hirai, Katsuyuki and Kashima, Kazuyoshi and Takasu, Shin’ichiro}, year={1989}, month=dec, pages={5267–5273} }