DOI: 10.1063/1.343323. Investigations of the SiO2/Si interface. I. Oxidation of a clean Si(100) surface using photoemission spectroscopy with synchrotron radiation

Investigations of the SiO2/Si interface. I. Oxidation of a clean Si(100) surface using photoemission spectroscopy with synchrotron radiation

10.1063/1.343323

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The surface oxidation process of Si(100), and the distribution of intermediary oxidation states at the SiO2/Si interface have been extensively studied by high resolution (ΔE&lt;0.3 eV) photoemission spectroscopy using synchrotron radiation. The results show that the ratio at the SiO2/Si interface for three intermediary states, Si3+, Si2+, and Si1+ (SiOx), is strongly dependent on SiO2 layer thickness. In particular, the proportion of Si3+ increases with the formation of the 0∼1 nm thick SiO2 layer. However, the three intermediary components at the interface are distributed with ratios of Si3+:Si2+:Si1+=7:2.5:1 in the oxidation stage where a SiO2 layer is formed over 1 nm.

Bibliography

Nakazawa, M., Kawase, S., & Sekiyama, H. (1989). Investigations of the SiO2/Si interface. I. Oxidation of a clean Si(100) surface using photoemission spectroscopy with synchrotron radiation. Journal of Applied Physics, 65(10), 4014â4018.

Authors 3

M. Nakazawa (first)
S. Kawase (additional)
H. Sekiyama (additional)

References 25 Referenced 29

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{'key': '2024020409364046200_r5', 'first-page': '3651', 'volume': '28', 'year': '1983', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1983)
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{'key': '2024020409364046200_r20'}
{'key': '2024020409364046200_r21', 'first-page': '59', 'volume': '3', 'year': '1984/85', 'journal-title': 'Photon Factory Activity Rep.'} / Photon Factory Activity Rep. (1984/85)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:05 a.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 4:36 a.m.)
Indexed	1 year, 7 months ago (Feb. 4, 2024, 10:23 a.m.)
Issued	36 years, 3 months ago (May 15, 1989)
Published	36 years, 3 months ago (May 15, 1989)
Published Print	36 years, 3 months ago (May 15, 1989)

Funders 0

None

BibTeX

@article{Nakazawa_1989, title={Investigations of the SiO2/Si interface. I. Oxidation of a clean Si(100) surface using photoemission spectroscopy with synchrotron radiation}, volume={65}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.343323}, DOI={10.1063/1.343323}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Nakazawa, M. and Kawase, S. and Sekiyama, H.}, year={1989}, month=may, pages={4014–4018} }

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