DOI: 10.1063/1.343227. Initial epitaxial growth of copper silicide on Si{111} studied by low-energy electron microscopy and photoemission electron microscopy

Initial epitaxial growth of copper silicide on Si{111} studied by low-energy electron microscopy and photoemission electron microscopy

10.1063/1.343227

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The epitaxial growth, including submonolayer epitaxial growth, of Cu silicide on Si{111} of standard wafer thickness is studied in situ by low-energy electron microscopy and photoemission electron microscopy. At elevated temperatures up to about 850 K copper silicide grows as a two-dimensional (2D) layer with a ‘‘(5×5)’’ structure followed by epitaxy of three-dimensional (3D) Cu3Si crystals. Atomic steps initially present on the wafer surface bunch into groups of 2 and 3 and facet along the Si〈110〉 directions. Except for steps, monolayer silicide films appear defect- and pinhole-free down to the resolution limit. Films grown by depositing Cu onto substrates held at room temperature followed by annealing differ in morphology and have 500 times the number of 3D islands as do films grown at the annealing temperature. Above 850 K the Cu dissolves into the bulk. Upon cooling Cu segregates to the surface as a 2D silicide with a ‘‘(5×5)’’ structure.

Bibliography

Mundschau, M., Bauer, E., Telieps, W., & ÅwiÈ©ch, W. (1989). Initial epitaxial growth of copper silicide on Si{111} studied by low-energy electron microscopy and photoemission electron microscopy. Journal of Applied Physics, 65(12), 4747â4752.

Authors 4

M. Mundschau (first)
E. Bauer (additional)
W. Telieps (additional)
W. Świȩch (additional)

References 45 Referenced 62

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:05 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 4:44 a.m.)
Indexed	11 months, 2 weeks ago (Sept. 14, 2024, 12:30 a.m.)
Issued	36 years, 2 months ago (June 15, 1989)
Published	36 years, 2 months ago (June 15, 1989)
Published Print	36 years, 2 months ago (June 15, 1989)

Funders 0

None

BibTeX

@article{Mundschau_1989, title={Initial epitaxial growth of copper silicide on Si{111} studied by low-energy electron microscopy and photoemission electron microscopy}, volume={65}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.343227}, DOI={10.1063/1.343227}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Mundschau, M. and Bauer, E. and Telieps, W. and Świȩch, W.}, year={1989}, month=jun, pages={4747–4752} }

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