DOI: 10.1063/1.341925. Switching kinetics of lead zirconate titanate submicron thin-film memories

Switching kinetics of lead zirconate titanate submicron thin-film memories

10.1063/1.341925

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We have measured coercive field and switching voltage versus thickness in PbZr0.54Ti0.46O3 thin (0.15–0.50 μm) films, together with switching times and current transient shapes versus field and temperature. The results show activation fields of order 120 kV/cm at room temperature, threshold voltages below 1.3 V, and switching speeds faster than 100 ns, demonstrating that fast, nonvolatile memories can be constructed that are compatible with standard silicon or GaAs integrated circuit voltage levels, without the need for an internal voltage pump. The displacement current transient data yield 2.5 as the dimensionality of domain growth if one-step intial nucleation rate is assumed, and are compatible with the theory of Ishibashi, yielding imaxtmax/Ps=1.65±0.23, in comparison with the predicted 1.646. The switching time exhibits an activation field dependence upon both voltage and temperature through a single reduced parameter (TC−T)(VTC),−1 in accord with the theory of Orihara and Ishibashi.

Bibliography

Scott, J. F., Kammerdiner, L., Parris, M., Traynor, S., Ottenbacher, V., Shawabkeh, A., & Oliver, W. F. (1988). Switching kinetics of lead zirconate titanate submicron thin-film memories. Journal of Applied Physics, 64(2), 787â792.

Authors 7

J. F. Scott (first)
L. Kammerdiner (additional)
M. Parris (additional)
S. Traynor (additional)
V. Ottenbacher (additional)
A. Shawabkeh (additional)
W. F. Oliver (additional)

References 31 Referenced 413

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Dates

Type	When
Created	23 years ago (July 26, 2002, 8:56 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 3:16 a.m.)
Indexed	2 weeks ago (Aug. 6, 2025, 9:25 a.m.)
Issued	37 years, 1 month ago (July 15, 1988)
Published	37 years, 1 month ago (July 15, 1988)
Published Print	37 years, 1 month ago (July 15, 1988)

Funders 0

None

BibTeX

@article{Scott_1988, title={Switching kinetics of lead zirconate titanate submicron thin-film memories}, volume={64}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.341925}, DOI={10.1063/1.341925}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Scott, J. F. and Kammerdiner, L. and Parris, M. and Traynor, S. and Ottenbacher, V. and Shawabkeh, A. and Oliver, W. F.}, year={1988}, month=jul, pages={787–792} }

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