Abstract
We describe a new secondary ion mass spectrometry technique for compositional analysis of matrix elements. It consists of detecting the molecular ions CsM+ rather than M± ions (M is the matrix element to be analyzed) under Cs+ primary ion bombardment. The linear behavior of the CsM+ ion yield makes the analysis independent of the matrix effect. An application to in-depth quantitative compositional analysis for AlGaAs/GaAs multilayer structures is given. The compositions were determined with an absolute accuracy better than 2% and the depth resolution was smaller than 100 Å.
References
8
Referenced
275
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 9:02 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 4, 2024, 3:34 a.m.) |
Indexed | 2 weeks, 3 days ago (Aug. 6, 2025, 8:57 a.m.) |
Issued | 36 years, 10 months ago (Oct. 1, 1988) |
Published | 36 years, 10 months ago (Oct. 1, 1988) |
Published Print | 36 years, 10 months ago (Oct. 1, 1988) |
@article{Gao_1988, title={A new secondary ion mass spectrometry technique for III-V semiconductor compounds using the molecular ions CsM+}, volume={64}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.341381}, DOI={10.1063/1.341381}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Gao, Y.}, year={1988}, month=oct, pages={3760–3762} }