Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

We describe a new secondary ion mass spectrometry technique for compositional analysis of matrix elements. It consists of detecting the molecular ions CsM+ rather than M± ions (M is the matrix element to be analyzed) under Cs+ primary ion bombardment. The linear behavior of the CsM+ ion yield makes the analysis independent of the matrix effect. An application to in-depth quantitative compositional analysis for AlGaAs/GaAs multilayer structures is given. The compositions were determined with an absolute accuracy better than 2% and the depth resolution was smaller than 100 Å.

Bibliography

Gao, Y. (1988). A new secondary ion mass spectrometry technique for III-V semiconductor compounds using the molecular ions CsM+. Journal of Applied Physics, 64(7), 3760–3762.

Authors 1
  1. Y. Gao (first)
References 8 Referenced 275
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Dates
Type When
Created 23 years ago (July 26, 2002, 9:02 a.m.)
Deposited 1 year, 6 months ago (Feb. 4, 2024, 3:34 a.m.)
Indexed 2 weeks, 3 days ago (Aug. 6, 2025, 8:57 a.m.)
Issued 36 years, 10 months ago (Oct. 1, 1988)
Published 36 years, 10 months ago (Oct. 1, 1988)
Published Print 36 years, 10 months ago (Oct. 1, 1988)
Funders 0

None

@article{Gao_1988, title={A new secondary ion mass spectrometry technique for III-V semiconductor compounds using the molecular ions CsM+}, volume={64}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.341381}, DOI={10.1063/1.341381}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Gao, Y.}, year={1988}, month=oct, pages={3760–3762} }