DOI: 10.1063/1.340312. Growth and characterization of Si1−<i>x</i>Ge<i>x</i> and Ge epilayers on (100) Si

Growth and characterization of Si1−xGex and Ge epilayers on (100) Si

10.1063/1.340312

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Two approaches to the growth of high-quality epitaxial Ge epilayers on (100) Si have been investigated. The first consisted of compositional-grading Si1−xGex layers and the use of strained-layer superlattices as dislocation filters. In general, this method produced unsatisfactory results, due to the difficulty in achieving good epitaxial growth in the Ge concentration interval 30%−70%. The second approach consisted of simply depositing pure Ge directly on (100) Si. Excellent epitaxial films with dislocation densities of less than 107 cm−2 and smooth morphology were obtained after optimization of the growth parameters. The initial growth temperature and post-growth annealing were found to be critical in obtaining good epitaxial material.

Bibliography

Baribeau, J. M., Jackman, T. E., Houghton, D. C., MaignÃ©, P., & Denhoff, M. W. (1988). Growth and characterization of Si1âxGex and Ge epilayers on (100) Si. Journal of Applied Physics, 63(12), 5738â5746.

Authors 5

J. M. Baribeau (first)
T. E. Jackman (additional)
D. C. Houghton (additional)
P. Maigné (additional)
M. W. Denhoff (additional)

References 40 Referenced 107

{'key': '2024020408063449600_r1'}
{'key': '2024020408063449600_r2'}
10.1063/1.335551 / J. Appl. Phys. (1985)
10.1063/1.96988 / Appl. Phys. Lett. (1986)
10.1063/1.335687 / J. Appl. Phys. (1985)
10.1063/1.337253 / J. Appl. Phys. (1986)
10.1063/1.97434 / Appl. Phys. Lett. (1986)
{'key': '2024020408063449600_r8'}
10.1063/1.97556 / Appl. Phys. Lett. (1986)
10.1063/1.98117 / Appl. Phys. Lett. (1987)
10.1063/1.95170 / Appl. Phys. Lett. (1984)
{'key': '2024020408063449600_r12', 'first-page': '904', 'volume': '66', 'year': '1987', 'journal-title': 'Can. J. Phys.'} / Can. J. Phys. (1987)
10.1063/1.96812 / Appl. Phys. Lett. (1986)
10.1063/1.91414 / Appl. Phys. Lett. (1980)
10.1063/1.92160 / Appl. Phys. Lett. (1981)
10.1116/1.582783 / J. Vac. Sci. Technol. B (1984)
{'key': '2024020408063449600_r16a', 'first-page': '889', 'volume': 'A4', 'year': '1986', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1986)
{'key': '2024020408063449600_r17', 'first-page': '36', 'volume': '39', 'year': '1986', 'journal-title': 'Phys. Today'} / Phys. Today (1986)
10.1116/1.572361 / J. Vac. Sci. Technol. A (1984)
10.1063/1.330534 / J. Appl. Phys. (1982)
{'key': '2024020408063449600_r20'}
10.1063/1.92565 / Appl. Phys. Lett. (1981)
10.1007/BF02667793 / J. Electron. Mater. (1987)
{'key': '2024020408063449600_r23'}
10.1016/0022-0248(87)90432-5 / J. Cryst. Growth (1987)
{'key': '2024020408063449600_r25'}
{'key': '2024020408063449600_r26'}
10.1088/0034-4885/45/1/002 / Rep. Prog. Phys. (1982)
10.1016/0029-554X(82)90510-9 / Nucl. Instrum. Methods (1982)
{'key': '2024020408063449600_r29'}
10.1149/1.2133401 / J. Electrochem. Soc. (1977)
{'key': '2024020408063449600_r31'}
10.1116/1.574481 / J. Vac. Sci. Technol. A (1987)
{'key': '2024020408063449600_r33'}
{'key': '2024020408063449600_r34'}
{'key': '2024020408063449600_r35', 'first-page': '125', 'volume': '27', 'year': '1984', 'journal-title': 'Solid State Technol.'} / Solid State Technol. (1984)
10.1116/1.573745 / J. Vac. Sci. Technol. A (1986)
{'key': '2024020408063449600_r37'}
{'key': '2024020408063449600_r38', 'first-page': '53', 'volume': '2', 'year': '1957', 'journal-title': 'Sov. Phys. Crystallogr.'} / Sov. Phys. Crystallogr. (1957)
10.1063/1.1708944 / J. Appl. Phys. (1967)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:55 a.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 3:06 a.m.)
Indexed	4 months, 3 weeks ago (April 12, 2025, 9:54 p.m.)
Issued	37 years, 2 months ago (June 15, 1988)
Published	37 years, 2 months ago (June 15, 1988)
Published Print	37 years, 2 months ago (June 15, 1988)

Funders 0

None

BibTeX

@article{Baribeau_1988, title={Growth and characterization of Si1−xGex and Ge epilayers on (100) Si}, volume={63}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.340312}, DOI={10.1063/1.340312}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Baribeau, J. M. and Jackman, T. E. and Houghton, D. C. and Maigné, P. and Denhoff, M. W.}, year={1988}, month=jun, pages={5738–5746} }

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