DOI: 10.1063/1.339086. Selective porous silicon formation in buried <i>p</i>+ layers

Selective porous silicon formation in buried p+ layers

10.1063/1.339086

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We report a systematic microstructural study of enhanced lateral porous silicon formation in the buried p+ layers of n/p+/p− and p−/p+/p− structures. We find, surprisingly, extremely selective porous silicon formation due to the thin p+ layer in both structures, despite the absence of a p-n junction in the p−/p+/p− structure. The interface between the isolated island and the buried porous silicon layer was always located at the depth where the net p-type dopant concentration was 1–8×1015/cm3. The observed microstructure can largely be understood in terms of a recent model for porous Si formation in uniformly doped Si, proposed by Beale et al. [J. Cryst. Growth 73, 622 (1985)]. However, we also observe, for the first time, important effects unique to a nonuniform dopant concentration.

Bibliography

Tsao, S. S., Myers, D. R., Guilinger, T. R., Kelly, M. J., & Datye, A. K. (1987). Selective porous silicon formation in buried p+ layers. Journal of Applied Physics, 62(10), 4182â4186.

Authors 5

S. S. Tsao (first)
D. R. Myers (additional)
T. R. Guilinger (additional)
M. J. Kelly (additional)
A. K. Datye (additional)

References 14 Referenced 21

10.1002/j.1538-7305.1956.tb02385.x / Bell Syst. Tech. J. (1956)
10.1149/1.2428873 / J. Electrochem. Soc. (1958)
10.1063/1.96789 / Appl. Phys. Lett. (1986)
10.1063/1.93298 / Appl. Phys. Lett. (1982)
{'key': '2024020407035330200_r5', 'first-page': '732', 'volume': '3', 'year': '1985', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1985)
10.1016/0022-0248(83)90166-5 / J. Cryst. Growth (1983)
10.1063/1.337036 / J. Appl. Phys. (1986)
{'key': '2024020407035330200_r8'}
10.1063/1.97577 / Appl. Phys. Lett. (1986)
10.1016/0022-0248(85)90029-6 / J. Cryst. Growth (1985)
{'key': '2024020407035330200_r11'}
{'key': '2024020407035330200_r12'}
{'key': '2024020407035330200_r13'}
{'key': '2024020407035330200_r14'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:53 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 2:04 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 3:03 p.m.)
Issued	37 years, 9 months ago (Nov. 15, 1987)
Published	37 years, 9 months ago (Nov. 15, 1987)
Published Print	37 years, 9 months ago (Nov. 15, 1987)

Funders 0

None

BibTeX

@article{Tsao_1987, title={Selective porous silicon formation in buried p+ layers}, volume={62}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.339086}, DOI={10.1063/1.339086}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Tsao, S. S. and Myers, D. R. and Guilinger, T. R. and Kelly, M. J. and Datye, A. K.}, year={1987}, month=nov, pages={4182–4186} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T20:03:50Z",
    "timestamp": 1707163430674
  },
  "reference-count": 14,
  "publisher": "AIP Publishing",
  "issue": "10",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1987,
        11,
        15
      ]
    ]
  },
  "abstract": "<jats:p>We report a systematic microstructural study of enhanced lateral porous silicon formation in the buried p+ layers of n/p+/p\u2212 and p\u2212/p+/p\u2212 structures. We find, surprisingly, extremely selective porous silicon formation due to the thin p+ layer in both structures, despite the absence of a p-n junction in the p\u2212/p+/p\u2212 structure. The interface between the isolated island and the buried porous silicon layer was always located at the depth where the net p-type dopant concentration was 1\u20138\u00d71015/cm3. The observed microstructure can largely be understood in terms of a recent model for porous Si formation in uniformly doped Si, proposed by Beale et\u2008al. [J. Cryst. Growth 73, 622 (1985)]. However, we also observe, for the first time, important effects unique to a nonuniform dopant concentration.</jats:p>",
  "DOI": "10.1063/1.339086",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:53:52Z",
    "timestamp": 1027688032000
  },
  "page": "4182-4186",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 21,
  "title": "Selective porous silicon formation in buried <i>p</i>+ layers",
  "prefix": "10.1063",
  "volume": "62",
  "author": [
    {
      "given": "S. S.",
      "family": "Tsao",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Sandia National Laboratories, Albuquerque, New Mexico 87185"
        }
      ]
    },
    {
      "given": "D. R.",
      "family": "Myers",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Sandia National Laboratories, Albuquerque, New Mexico 87185"
        }
      ]
    },
    {
      "given": "T. R.",
      "family": "Guilinger",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Sandia National Laboratories, Albuquerque, New Mexico 87185"
        }
      ]
    },
    {
      "given": "M. J.",
      "family": "Kelly",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Sandia National Laboratories, Albuquerque, New Mexico 87185"
        }
      ]
    },
    {
      "given": "A. K.",
      "family": "Datye",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020407035330200_r1",
      "doi-asserted-by": "crossref",
      "first-page": "333",
      "DOI": "10.1002/j.1538-7305.1956.tb02385.x",
      "volume": "35",
      "year": "1956",
      "journal-title": "Bell Syst. Tech. J."
    },
    {
      "key": "2024020407035330200_r2",
      "doi-asserted-by": "crossref",
      "first-page": "402",
      "DOI": "10.1149/1.2428873",
      "volume": "105",
      "year": "1958",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020407035330200_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1793",
      "DOI": "10.1063/1.96789",
      "volume": "48",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020407035330200_r4",
      "doi-asserted-by": "crossref",
      "first-page": "86",
      "DOI": "10.1063/1.93298",
      "volume": "41",
      "year": "1982",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020407035330200_r5",
      "first-page": "732",
      "volume": "3",
      "year": "1985",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020407035330200_r6",
      "doi-asserted-by": "crossref",
      "first-page": "547",
      "DOI": "10.1016/0022-0248(83)90166-5",
      "volume": "63",
      "year": "1983",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020407035330200_r7",
      "doi-asserted-by": "crossref",
      "first-page": "439",
      "DOI": "10.1063/1.337036",
      "volume": "59",
      "year": "1986",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020407035330200_r8"
    },
    {
      "key": "2024020407035330200_r9",
      "doi-asserted-by": "crossref",
      "first-page": "716",
      "DOI": "10.1063/1.97577",
      "volume": "49",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020407035330200_r10",
      "doi-asserted-by": "crossref",
      "first-page": "622",
      "DOI": "10.1016/0022-0248(85)90029-6",
      "volume": "73",
      "year": "1985",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020407035330200_r11"
    },
    {
      "key": "2024020407035330200_r12"
    },
    {
      "key": "2024020407035330200_r13"
    },
    {
      "key": "2024020407035330200_r14"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/62/10/4182/18613508/4182_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/62/10/4182/18613508/4182_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T07:04:02Z",
    "timestamp": 1707030242000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/62/10/4182/13931/Selective-porous-silicon-formation-in-buried-p"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1987,
        11,
        15
      ]
    ]
  },
  "references-count": 14,
  "journal-issue": {
    "issue": "10",
    "published-print": {
      "date-parts": [
        [
          1987,
          11,
          15
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.339086",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1987,
        11,
        15
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1987,
        11,
        15
      ]
    ]
  }
}