Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

The valence-band discontinuity ΔEv has been determined for the (100) InAs/GaSb system by x-ray photoemission core level spectroscopy. For 20 Å of InAs on GaSb we find that ΔEv=0.53 eV. The reverse structure, consisting of a 20-Å layer of GaSb on InAs, gave a measured value of ΔEv=0.48 eV. Since the difference in these two values lies within our experimental uncertainty, we report an average offset of 0.51±0.1 eV. The large value of the valence-band discontinuity in this system shows the band lineup to be of the broken gap variety with the InAs conduction-band energy lying below that of the GaSb valence band. This result is in good agreement with theoretical predictions.

Bibliography

Gualtieri, G. J., Schwartz, G. P., Nuzzo, R. G., Malik, R. J., & Walker, J. F. (1987). Determination of the (100) InAs/GaSb heterojunction valence-band discontinuity by x-ray photoemission core level spectroscopy. Journal of Applied Physics, 61(12), 5337–5341.

Authors 5
  1. G. J. Gualtieri (first)
  2. G. P. Schwartz (additional)
  3. R. G. Nuzzo (additional)
  4. R. J. Malik (additional)
  5. J. F. Walker (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 8:55 a.m.)
Deposited 1 year, 6 months ago (Feb. 4, 2024, 1:34 a.m.)
Indexed 1 year, 6 months ago (Feb. 10, 2024, 6 a.m.)
Issued 38 years, 2 months ago (June 15, 1987)
Published 38 years, 2 months ago (June 15, 1987)
Published Print 38 years, 2 months ago (June 15, 1987)
Funders 0

None

@article{Gualtieri_1987, title={Determination of the (100) InAs/GaSb heterojunction valence-band discontinuity by x-ray photoemission core level spectroscopy}, volume={61}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.338270}, DOI={10.1063/1.338270}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Gualtieri, G. J. and Schwartz, G. P. and Nuzzo, R. G. and Malik, R. J. and Walker, J. F.}, year={1987}, month=jun, pages={5337–5341} }