Abstract
The valence-band discontinuity ΔEv has been determined for the (100) InAs/GaSb system by x-ray photoemission core level spectroscopy. For 20 Å of InAs on GaSb we find that ΔEv=0.53 eV. The reverse structure, consisting of a 20-Å layer of GaSb on InAs, gave a measured value of ΔEv=0.48 eV. Since the difference in these two values lies within our experimental uncertainty, we report an average offset of 0.51±0.1 eV. The large value of the valence-band discontinuity in this system shows the band lineup to be of the broken gap variety with the InAs conduction-band energy lying below that of the GaSb valence band. This result is in good agreement with theoretical predictions.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:55 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 4, 2024, 1:34 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 10, 2024, 6 a.m.) |
Issued | 38 years, 2 months ago (June 15, 1987) |
Published | 38 years, 2 months ago (June 15, 1987) |
Published Print | 38 years, 2 months ago (June 15, 1987) |
@article{Gualtieri_1987, title={Determination of the (100) InAs/GaSb heterojunction valence-band discontinuity by x-ray photoemission core level spectroscopy}, volume={61}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.338270}, DOI={10.1063/1.338270}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Gualtieri, G. J. and Schwartz, G. P. and Nuzzo, R. G. and Malik, R. J. and Walker, J. F.}, year={1987}, month=jun, pages={5337–5341} }