DOI: 10.1063/1.338215. The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

10.1063/1.338215

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

X-ray photoemission spectroscopy has been used to examine the localization and crystallographic dependence of Si+1, Si+2, and Si+3 suboxide states at the SiO2/Si interface for (100)- and (111)-oriented substrates with gate oxide quality thermal oxides. The Si+1 and Si+2 states are localized within 6–10 Å of the interface while the Si+3 state extends ∼30 Å into the bulk SiO2. The distribution of Si+1 and Si+2 states shows a strong crystallographic dependence with Si+2 dominating on (100) substrates and Si+1 dominating on (111) substrates. This crystallographic dependence is anticipated from consideration of ideal unreconstructed (100) and (111) Si surfaces, suggesting that (1) the Si+1 and Si+2 states are localized immediately within the first monolayer at the interface and (2) the first few monolayers of substrate Si atoms are not significantly displaced from the bulk. The total number of suboxide states observed at the SiO2/Si interface corresponds to 94% and 83% of a monolayer for these (100) and (111) substrates, respectively. We speculate that the remaining interfacial substrate Si atoms that are not associated with bonding to oxygen are bonded to impurity species.

Bibliography

Grunthaner, P. J., Hecht, M. H., Grunthaner, F. J., & Johnson, N. M. (1987). The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface. Journal of Applied Physics, 61(2), 629â638.

Authors 4

P. J. Grunthaner (first)
M. H. Hecht (additional)
F. J. Grunthaner (additional)
N. M. Johnson (additional)

References 33 Referenced 252

{'key': '2024020405482715100_r1'}
10.1016/0039-6028(80)90442-2 / Surf. Sci. (1980)
10.1063/1.90983 / Appl. Phys. Lett. (1979)
10.1063/1.331320 / J. Appl. Phys. (1982)
{'key': '2024020405482715100_r5', 'first-page': '106', 'volume': '78-3', 'year': '1978', 'journal-title': 'Proc. Electrochem. Soc.,'} / Proc. Electrochem. Soc., (1978)
10.1063/1.90498 / Appl. Phys. Lett. (1978)
{'key': '2024020405482715100_r7'}
10.1116/1.568955 / J. Vac. Sci. Technol. (1976)
10.1147/rd.223.0294 / IBM J. Res. Dev. (1978)
10.1116/1.570218 / J. Vac. Sci. Technol. (1979)
10.1103/PhysRevLett.43.1683 / Phys. Rev. Lett. (1979)
10.1063/1.94565 / Appl. Phys. Lett. (1984)
10.1063/1.94392 / Appl. Phys. Lett. (1983)
10.1149/1.2129899 / J. Electrochem. Soc. (1980)
{'key': '2024020405482715100_r12'}
10.1016/0009-2614(76)80496-4 / Chem. Phys. Lett. (1976)
{'key': '2024020405482715100_r14'}
{'key': '2024020405482715100_r14a'}
{'key': '2024020405482715100_r15', 'first-page': '584', 'volume': '2', 'year': '1984', 'journal-title': 'J. Vac. Sci. Technol. A'} / J. Vac. Sci. Technol. A (1984)
{'key': '2024020405482715100_r16'}
10.1016/0039-6028(85)90521-7 / Surf. Sci. (1985)
10.1063/1.1655297 / Appl. Phys. Lett. (1974)
10.1107/S0021889869006868 / J. Appl. Crystallogr. (1969)
{'key': '2024020405482715100_r20', 'first-page': '20', 'volume': '41', 'year': '1978', 'journal-title': 'Phys. Rev. Lett.'} / Phys. Rev. Lett. (1978)
10.1016/0039-6028(80)90561-0 / Surf. Sci. (1980)
{'key': '2024020405482715100_r22'}
{'key': '2024020405482715100_r23'}
{'key': '2024020405482715100_r24'}
10.1149/1.2408122 / J. Electrochem. Soc. (1971)
10.1063/1.332009 / J. Appl. Phys. (1983)
{'key': '2024020405482715100_r27'}
10.1116/1.572449 / J. Vac. Sci. Technol. A (1984)
10.1103/PhysRevB.32.8171 / Phys. Rev. B (1985)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:55 a.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 12:48 a.m.)
Indexed	11 months, 3 weeks ago (Sept. 11, 2024, 8:34 a.m.)
Issued	38 years, 7 months ago (Jan. 15, 1987)
Published	38 years, 7 months ago (Jan. 15, 1987)
Published Print	38 years, 7 months ago (Jan. 15, 1987)

Funders 0

None

BibTeX

@article{Grunthaner_1987, title={The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface}, volume={61}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.338215}, DOI={10.1063/1.338215}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Grunthaner, P. J. and Hecht, M. H. and Grunthaner, F. J. and Johnson, N. M.}, year={1987}, month=jan, pages={629–638} }

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