DOI: 10.1063/1.338179. Lattice-strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance

Lattice-strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance

10.1063/1.338179

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Double-heterojunction NpN GaAs/InxGa1−xAs/GaAs bipolar transistor layers have been grown by molecular-beam epitaxy, and large-area devices have been processed and characterized. The indium mole fraction in the strained base layer, and thus the band offsets, has been varied with significant differences in current gains. From the gain versus indium-composition relation a valence-band offset of ΔEv =9.7 meV/% In is derived. We found that the highest base-In content yields the highest-gain devices despite the presence of interface misfit dislocations and dark-line defects.

Bibliography

Ramberg, L. P., Enquist, P. M., Chen, Y.-K., Najjar, F. E., Eastman, L. F., Fitzgerald, E. A., & Kavanagh, K. L. (1987). Lattice-strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance. Journal of Applied Physics, 61(3), 1234â1236.

Authors 7

L. P. Ramberg (first)
P. M. Enquist (additional)
Y.-K. Chen (additional)
F. E. Najjar (additional)
L. F. Eastman (additional)
E. A. Fitzgerald (additional)
K. L. Kavanagh (additional)

References 16 Referenced 51

10.1109/JRPROC.1957.278348 / Proc. IRE (1957)
10.1109/PROC.1982.12226 / Proc. IEEE (1982)
{'key': '2024020405534680900_r3'}
10.1063/1.97116 / Appl. Phys. Lett. (1986)
{'key': '2024020405534680900_r5', 'first-page': '491', 'volume': 'EDL-6', 'year': '1985', 'journal-title': 'IEEE Electron. Dev. Lett.'} / IEEE Electron. Dev. Lett. (1985)
10.1007/BF02660192 / J. Electron. Mater. (1975)
{'key': '2024020405534680900_r7', 'first-page': '167', 'volume': 'QE-17', 'year': '1981', 'journal-title': 'IEEE J. Quantum Electron.'} / IEEE J. Quantum Electron. (1981)
{'key': '2024020405534680900_r8', 'first-page': '599', 'volume': '74', 'year': '1985', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1985)
10.1063/1.95783 / Appl. Phys. Lett. (1985)
10.1016/0038-1101(86)90029-8 / Solid-State Electron. (1986)
10.1116/1.571635 / J. Vac. Sci. Technol. (1982)
{'key': '2024020405534680900_r12'}
10.1016/0038-1101(86)90032-8 / Solid-State Electron. (1986)
{'key': '2024020405534680900_r14', 'first-page': '593', 'volume': '74', 'year': '1985', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1985)
{'key': '2024020405534680900_r15'}
10.1143/JJAP.24.L241 / Jpn. J. Appl. Phys. (1985)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:55 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 12:53 a.m.)
Indexed	1 year, 1 month ago (July 5, 2024, 5:21 p.m.)
Issued	38 years, 7 months ago (Feb. 1, 1987)
Published	38 years, 7 months ago (Feb. 1, 1987)
Published Print	38 years, 7 months ago (Feb. 1, 1987)

Funders 0

None

BibTeX

@article{Ramberg_1987, title={Lattice-strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance}, volume={61}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.338179}, DOI={10.1063/1.338179}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Ramberg, L. P. and Enquist, P. M. and Chen, Y.-K. and Najjar, F. E. and Eastman, L. F. and Fitzgerald, E. A. and Kavanagh, K. L.}, year={1987}, month=feb, pages={1234–1236} }

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