DOI: 10.1063/1.337743. Surface chemistry of HF passivated silicon: X-ray photoelectron and ion scattering spectroscopy results

Surface chemistry of HF passivated silicon: X-ray photoelectron and ion scattering spectroscopy results

10.1063/1.337743

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

X-ray photoelectron spectroscopy and ion scattering spectroscopy studies of HF-treated silicon surfaces are described in an effort to understand the chemical termination leading to the near ideal electrical passivation of such surfaces. Results suggest a fluorine surface density of order a monolayer chemically bonded to silicon with a partial oxygen contamination due to exposure of the HF-treated wafer to air, and a physisorbed hydrocarbon layer on top.

Bibliography

Weinberger, B. R., Peterson, G. G., Eschrich, T. C., & Krasinski, H. A. (1986). Surface chemistry of HF passivated silicon: X-ray photoelectron and ion scattering spectroscopy results. Journal of Applied Physics, 60(9), 3232â3234.

Authors 4

B. R. Weinberger (first)
G. G. Peterson (additional)
T. C. Eschrich (additional)
H. A. Krasinski (additional)

References 19 Referenced 127

10.1116/1.573340 / J. Vac. Sci. Technol. A (1985)
10.1103/PhysRevLett.57.249 / Phys. Rev. Lett. (1986)
10.1021/ar00068a004 / Acc. Chem. Res. (1981)
{'key': '2024020405342821800_r4'}
{'key': '2024020405342821800_r5'}
10.1063/1.336133 / J. Appl. Phys. (1985)
10.1063/1.328049 / J. Appl. Phys. (1980)
{'key': '2024020405342821800_r8', 'first-page': '772', 'volume': '114', 'year': '1972', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. (1972)
10.1063/1.327990 / J. Appl. Phys. (1980)
10.1103/PhysRevB.30.764 / Phys. Rev. B (1984)
10.1063/1.95699 / Appl. Phys. Lett. (1985)
10.1116/1.572039 / J. Vac. Sci. Technol. A (1983)
{'key': '2024020405342821800_r13', 'first-page': '645', 'volume': '2', 'year': '1984', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1984)
10.1063/1.96700 / Appl. Phys. Lett. (1986)
{'key': '2024020405342821800_r15', 'first-page': '2069', 'volume': '25', 'year': '1981', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1981)
10.1002/sia.740030506 / Surf. Sci. Interface Anal. (1981)
10.1016/0039-6028(71)90214-7 / Surf. Sci. (1971)
{'key': '2024020405342821800_r18', 'first-page': '261', 'volume': '9', 'year': '1976', 'journal-title': 'Appl. Phys.'} / Appl. Phys. (1976)
10.1016/0009-2614(72)80138-6 / Chem. Phys. Lett. (1972)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:02 a.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 12:34 a.m.)
Indexed	1 year, 6 months ago (Feb. 23, 2024, 7:23 a.m.)
Issued	38 years, 10 months ago (Nov. 1, 1986)
Published	38 years, 10 months ago (Nov. 1, 1986)
Published Print	38 years, 10 months ago (Nov. 1, 1986)

Funders 0

None

BibTeX

@article{Weinberger_1986, title={Surface chemistry of HF passivated silicon: X-ray photoelectron and ion scattering spectroscopy results}, volume={60}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.337743}, DOI={10.1063/1.337743}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Weinberger, B. R. and Peterson, G. G. and Eschrich, T. C. and Krasinski, H. A.}, year={1986}, month=nov, pages={3232–3234} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        23
      ]
    ],
    "date-time": "2024-02-23T12:23:41Z",
    "timestamp": 1708691021507
  },
  "reference-count": 19,
  "publisher": "AIP Publishing",
  "issue": "9",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1986,
        11,
        1
      ]
    ]
  },
  "abstract": "<jats:p>X-ray photoelectron spectroscopy and ion scattering spectroscopy studies of HF-treated silicon surfaces are described in an effort to understand the chemical termination leading to the near ideal electrical passivation of such surfaces. Results suggest a fluorine surface density of order a monolayer chemically bonded to silicon with a partial oxygen contamination due to exposure of the HF-treated wafer to air, and a physisorbed hydrocarbon layer on top.</jats:p>",
  "DOI": "10.1063/1.337743",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:02:59Z",
    "timestamp": 1027688579000
  },
  "page": "3232-3234",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 127,
  "title": "Surface chemistry of HF passivated silicon: X-ray photoelectron and ion scattering spectroscopy results",
  "prefix": "10.1063",
  "volume": "60",
  "author": [
    {
      "given": "B. R.",
      "family": "Weinberger",
      "sequence": "first",
      "affiliation": [
        {
          "name": "United Technologies Research Center, East Hartford, Connecticut 06108"
        }
      ]
    },
    {
      "given": "G. G.",
      "family": "Peterson",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "United Technologies Research Center, East Hartford, Connecticut 06108"
        }
      ]
    },
    {
      "given": "T. C.",
      "family": "Eschrich",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "United Technologies Research Center, East Hartford, Connecticut 06108"
        }
      ]
    },
    {
      "given": "H. A.",
      "family": "Krasinski",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "United Technologies Research Center, East Hartford, Connecticut 06108"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020405342821800_r1",
      "doi-asserted-by": "crossref",
      "first-page": "887",
      "DOI": "10.1116/1.573340",
      "volume": "3",
      "year": "1985",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020405342821800_r2",
      "doi-asserted-by": "crossref",
      "first-page": "249",
      "DOI": "10.1103/PhysRevLett.57.249",
      "volume": "57",
      "year": "1986",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020405342821800_r3",
      "doi-asserted-by": "crossref",
      "first-page": "246",
      "DOI": "10.1021/ar00068a004",
      "volume": "14",
      "year": "1981",
      "journal-title": "Acc. Chem. Res."
    },
    {
      "key": "2024020405342821800_r4"
    },
    {
      "key": "2024020405342821800_r5"
    },
    {
      "key": "2024020405342821800_r6",
      "doi-asserted-by": "crossref",
      "first-page": "1177",
      "DOI": "10.1063/1.336133",
      "volume": "58",
      "year": "1985",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020405342821800_r7",
      "doi-asserted-by": "crossref",
      "first-page": "3365",
      "DOI": "10.1063/1.328049",
      "volume": "51",
      "year": "1980",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020405342821800_r8",
      "first-page": "772",
      "volume": "114",
      "year": "1972",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020405342821800_r9",
      "doi-asserted-by": "crossref",
      "first-page": "2614",
      "DOI": "10.1063/1.327990",
      "volume": "51",
      "year": "1980",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020405342821800_r10",
      "doi-asserted-by": "crossref",
      "first-page": "764",
      "DOI": "10.1103/PhysRevB.30.764",
      "volume": "30",
      "year": "1984",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020405342821800_r11",
      "doi-asserted-by": "crossref",
      "first-page": "1187",
      "DOI": "10.1063/1.95699",
      "volume": "46",
      "year": "1985",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020405342821800_r12",
      "doi-asserted-by": "crossref",
      "first-page": "1452",
      "DOI": "10.1116/1.572039",
      "volume": "1",
      "year": "1983",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020405342821800_r13",
      "first-page": "645",
      "volume": "2",
      "year": "1984",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020405342821800_r14",
      "doi-asserted-by": "crossref",
      "first-page": "718",
      "DOI": "10.1063/1.96700",
      "volume": "48",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020405342821800_r15",
      "first-page": "2069",
      "volume": "25",
      "year": "1981",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020405342821800_r16",
      "doi-asserted-by": "crossref",
      "first-page": "211",
      "DOI": "10.1002/sia.740030506",
      "volume": "3",
      "year": "1981",
      "journal-title": "Surf. Sci. Interface Anal."
    },
    {
      "key": "2024020405342821800_r17",
      "doi-asserted-by": "crossref",
      "first-page": "171",
      "DOI": "10.1016/0039-6028(71)90214-7",
      "volume": "25",
      "year": "1971",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2024020405342821800_r18",
      "first-page": "261",
      "volume": "9",
      "year": "1976",
      "journal-title": "Appl. Phys."
    },
    {
      "key": "2024020405342821800_r19",
      "doi-asserted-by": "crossref",
      "first-page": "380",
      "DOI": "10.1016/0009-2614(72)80138-6",
      "volume": "14",
      "year": "1972",
      "journal-title": "Chem. Phys. Lett."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/60/9/3232/18607140/3232_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/60/9/3232/18607140/3232_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T05:34:37Z",
    "timestamp": 1707024877000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/60/9/3232/11905/Surface-chemistry-of-HF-passivated-silicon-X-ray"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1986,
        11,
        1
      ]
    ]
  },
  "references-count": 19,
  "journal-issue": {
    "issue": "9",
    "published-print": {
      "date-parts": [
        [
          1986,
          11,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.337743",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1986,
        11,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1986,
        11,
        1
      ]
    ]
  }
}